2N6517G Datasheet 2N6517G, 2N6517RLRPG, 2N6515RLRMG | P1-P3

March, 2007 − Rev. 5

1 Publication Order Number:

2N6515/D

NPN − 2N6515, 2N6517;

PNP − 2N6520

High Voltage Transistors

NPN and PNP

Features

• Voltage and Current are Negative for PNP Transistors

• These are Pb−Free Devices*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage

2N6515

2N6517, 2N6520

V

CEO

250

350

Vdc

Collector − Base Voltage

2N6515

2N6517, 2N6520

V

CBO

250

350

Vdc

Emitter − Base Voltage

2N6515, 2N6517

2N6520

V

EBO

6.0

5.0

Vdc

Base Current I

B

250 mAdc

Collector Current − Continuous I

C

500 mAdc

Total Device Dissipation @ T

A

= 25°C

Derate above 25°C

P

D

625

5.0

mW

mW/°C

Total Device Dissipation @ T

C

= 25°C

Derate above 25°C

P

D

1.5

12

W

mW/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

−55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient R

q

JA

200 °C/W

Thermal Resistance, Junction−to−Case R

q

JC

83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference

Manual, SOLDERRM/D.

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

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COLLECTOR

3

2

BASE

1

EMITTER

COLLECTOR

3

2

BASE

1

EMITTER

NPN

PNP

1

2

3

1

2

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

3

TO−92

CASE 29

STYLE 1

MARKING DIAGRAM

2N

65xx

AYWW G

G

xx = 15, 17, or 20

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

NPN − 2N6515, 2N6517; PNP − 2N6520

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2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

(I

C

= 1.0 mAdc, I

B

= 0) 2N6515

2N6517, 2N6520

V

(BR)CEO

250

350

−

Vdc

Collector−Base Breakdown Voltage

(I

C

= 100 mAdc, I

E

= 0 ) 2N6515

2N6517, 2N6520

V

(BR)CBO

250

350

−

Vdc

Emitter−Base Breakdown Voltage

(I

E

= 10 mAdc, I

C

= 0) 2N6515, 2N6517

2N6520

V

(BR)EBO

6.0

5.0

−

Vdc

Collector Cutoff Current

(V

CB

= 150 Vdc, I

E

= 0) 2N6515

(V

CB

= 250 Vdc, I

E

= 0) 2N6517, 2N6520

I

CBO

−

50

nAdc

Emitter Cutoff Current

(V

EB

= 5.0 Vdc, I

C

= 0) 2N6515, 2N6517

(V

EB

= 4.0 Vdc, I

C

= 0) 2N6520

I

EBO

−

50

nAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(I

C

= 1.0 mAdc, V

CE

= 10 Vdc) 2N6515

2N6517, 2N6520

(I

C

= 10 mAdc, V

CE

= 10 Vdc) 2N6515

2N6517, 2N6520

(I

C

= 30 mAdc, V

CE

= 10 Vdc) 2N6515

2N6517, 2N6520

(I

C

= 50 mAdc, V

CE

= 10 Vdc) 2N6515

2N6517, 2N6520

(I

C

= 100 mAdc, V

CE

= 10 Vdc) 2N6515

2N6517, 2N6520

h

FE

35

20

50

30

50

30

45

20

25

15

−

300

200

220

200

−

Collector−Emitter Saturation Voltage

(I

C

= 10 mAdc, I

B

= 1.0 mAdc)

(I

C

= 20 mAdc, I

B

= 2.0 mAdc)

(I

C

= 30 mAdc, I

B

= 3.0 mAdc)

(I

C

= 50 mAdc, I

B

= 5.0 mAdc)

V

CE(sat)

−

0.30

0.35

0.50

1.0

Vdc

Base−Emitter Saturation Voltage

(I

C

= 10 mAdc, I

B

= 1.0 mAdc)

(I

C

= 20 mAdc, I

B

= 2.0 mAdc)

(I

C

= 30 mAdc, I

B

= 3.0 mAdc)

V

BE(sat)

−

0.75

0.85

0.90

Vdc

Base−Emitter On Voltage

(I

C

= 100 mAdc, V

CE

= 10 Vdc)

V

BE(on)

− 2.0 Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 1)

(I

C

= 10 mAdc, V

CE

= 20 Vdc, f = 20 MHz)

f

T

40 200 MHz

Collector−Base Capacitance

(V

CB

= 20 Vdc, I

E

= 0, f = 1.0 MHz)

C

cb

− 6.0 pF

Emitter−Base Capacitance

(V

EB

= 0.5 Vdc, I

C

= 0, f = 1.0 MHz) 2N6515, 2N6517

2N6520

C

eb

−

80

100

pF

SWITCHING CHARACTERISTICS

Turn−On Time

(V

CC

= 100 Vdc, V

BE(off)

= 2.0 Vdc, I

C

= 50 mAdc, I

B1

= 10 mAdc)

t

on

− 200 ms

Turn−Off Time

(V

CC

= 100 Vdc, I

C

= 50 mAdc, I

B1

= I

B2

= 10 mAdc)

t

off

− 3.5 ms

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

NPN − 2N6515, 2N6517; PNP − 2N6520

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3

Figure 1. DC Current Gain

NPN 2N6515

I

C

, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

h

FE

, DC CURRENT GAIN

200

100

20

30

50

70

V

CE

= 10 V

T

J

= 125°C

25°C

−55°C

Figure 2. DC Current Gain

NPN 2N6517

I

C

, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

200

100

10

20

50

70

V

CE

= 10 V

T

J

= 125°C

25°C

−55°C

I

C

, COLLECTOR CURRENT (mA)

−100−1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70

V

CE

= −10 V

T

J

= 125°C

25°C

−55°C

I

C

, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

100

20

30

50

70

I

C

, COLLECTOR CURRENT (mA)

−100−1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70

f, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)

T

f, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)

T

h

FE

, DC CURRENT GAIN

h

FE

, DC CURRENT GAIN

10

100

20

30

50

70

10

T

J

= 25°C

V

CE

= 20 V

f = 20 MHz

T

J

= 25°C

V

CE

= −20 V

f = 20 MHz

30

200

100

10

20

50

70

30

Figure 3. DC Current Gain

PNP 2N6520

Figure 4. Current−Gain − Bandwidth Product

NPN 2N6515, 2N6517

Figure 5. Current−Gain − Bandwidth Product

PNP 2N6520

2N6517G

2N6517G

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