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VND10BSPTR-E

P1-P3P4-P6P7-P9
VND10BSP
ISO HIGH SIDE SMART POWER SOLID STATE RELAY
March 1998
BLOCK DIAGRAM
TYPE V
DSS
R
DS(on
)I
OUT
V
CC
VND10BSP 40 V 0.1 Ω 3.4 A 26 V
■ OUTPUT CURRENT (CONTINUOUS):
14A @ T
c
=85
o
C PER CHANNEL
■ 5V LOGIC LEVEL COMPATIBLE INPUT
■ THERMAL SHUT-DOWN
■ UNDER VOLTAGE PROTECTION
■ OPEN DRAIN DIAGNOSTIC OUTPUT
■ INDUCTIVE LOAD FAST
DEMAGNETIZATION
■ VERY LOW STAND-BY POWER
DISSIPATION
DESCRIPTION
The VND10BSP is a monolithic device made
using SGS-THOMSON Vertical Intelligent Power
Technology, intended for driving resistive or
inductive loads with one side grounded. This
device has two channels, and a common
diagnostic. Built-in thermal shut-down protects
the chip from over temperature and short circuit.
The statusoutput provides an indication of open
load in on state, open load in off state,
overtemperatureconditions and stuck-on to V
CC
.
1
10
PowerSO-10
1/9
ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Unit
V
(BR)DSS
Drain-Source Breakdown Voltage 40 V
I
OUT
Output Current (cont.) at T
c
=85
o
C14A
I
OUT
(RMS) RMS Output Current at T
c
=85
o
C and f > 1Hz 14 A
I
R
Reverse Output Current at T
c
=85
o
C-14A
I
IN
Input Current ±10 mA
-V
CC
Reverse Supply Voltage -4 V
I
STAT
Status Current ±10 mA
V
ESD
Electrostatic Discharge (1.5 kΩ, 100 pF) 2000 V
P
tot
Power Dissipation at T
c
=25
o
C75W
T
j
Junction Operating Temperature -40 to 150
o
C
T
stg
Storage Temperature -55 to 150
o
C
CONNECTION DIAGRAMS
CURRENT AND VOLTAGE CONVENTIONS
VND10BSP
2/9
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient ($) Max
1.65
60
o
C/W
o
C/W
($) When mounted using minimum recommended pad size on FR-4 board
ELECTRICAL CHARACTERISTICS (8 < V
CC
< 16 V; -40 ≤ T
j
≤ 125
o
C unless otherwise specified)
POWER
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
CC
Supply Voltage 6 13 26 V
In(*) Nominal Current T
c
=85
o
CV
DS(on)
≤ 0.5 V
CC
=13V 3.4 5.2 A
R
on
On State Resistance I
OUT
=I
n
V
CC
=13V T
j
=25
o
C 0.065 0.1 Ω
I
S
Supply Current Off State T
j
=25
o
CV
CC
= 13 V 35 100 µA
V
DS(MAX)
Maximum Voltage Drop I
OUT
=7.5A T
j
=85
o
CV
CC
=13V 1.2 2 V
R
i
Output to GND internal
Impedance
T
j
=25
o
C51020KΩ
SWITCHING
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
(^) Turn-on Delay Time Of
Output Current
R
out
=2.7Ω 535200µs
t
r
(^) Rise Time Of Output
Current
R
out
=2.7Ω 28 110 360 µs
t
d(off)
(^) Turn-off Delay Time Of
Output Current
R
out
=2.7Ω 10 140 500 µs
t
f
(^) Fall Time Of Output
Current
R
out
=2.7Ω 28 75 360 µs
(di/dt)
on
Turn-on Current Slope R
out
=2.7Ω 0.003 0.1 A/µs
(di/dt)
off
Turn-off Current Slope R
out
=2.7Ω 0.005 0.1 A/µs
LOGIC INPUT
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
IL
Input Low Level
Voltage
1.5 V
V
IH
Input High Level
Voltage
3.5 (•)V
V
I(hyst.)
Input Hysteresis
Voltage
0.2 0.9 1.5 V
I
IN
Input Current V
IN
=5V T
j
=25
o
C30100µA
V
ICL
Input Clamp Voltage I
IN
=10mA
I
IN
=-10mA
56
-0.7
7V
V
VND10BSP
3/9
P1-P3P4-P6P7-P9

VND10BSPTR-E

Mfr. #:
Buy VND10BSPTR-E
Manufacturer:
STMicroelectronics
Description:
IC SMART PWR SSR 2CH POWERSO10
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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