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VS-C4ZU3006FP-E3

P1-P3P4-P5
VS-C4ZU3006FP-E3
www.vishay.com
Vishay Semiconductors
Revision: 26-Jul-16
1
Document Number: 95644
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Soft Recovery Diode,
2 x 15 A FRED Pt
®
Gen 4
FEATURES
• Gen 4 FRED Pt technology
•Low I
RRM
and reverse recovery charge
• Very low forward voltage drop
• Polyimide passivated chip for high reliability
standard
• Fully isolated package (V
INS
= 2500 V
RMS
)
• 175 °C operating junction temperature
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Gen 4 Fred Pt technology, state of the art, ultralow V
F
, soft
switching optimized for Discontinuous (Critical) Mode (DCM)
and IGBT F/W diode.
The minimized conduction loss, optimized stored charge
and low recovery current minimize the switching losses and
reduce over dissipation in the switching element and
snubbers.
PRODUCT SUMMARY
Package TO-3PF
I
F(AV)
per leg 15 A
V
R
600 V
V
F
at I
F
1.08 V
t
rr
typ. 37 ns
T
J
max. 175 °C
Diode variation Common cathode
Anode
1
3
2
Common
cathode
Anode
TO-3PF
1
2
3
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V
RRM
600 V
Average rectified forward current, per leg I
F(AV)
T
C
= 120 °C 15
A
Non-repetitive peak surge current, per leg I
FSM
T
C
= 25 °C, t
p
= 8.3 ms half sine wave 180
Operating junction and storage temperature T
J
, T
Stg
-55 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage, blocking voltage V
BR
, V
R
I
R
= 100 μA 600 - -
V
Forward voltage V
F
I
F
= 15 A - 1.3 1.6
I
F
= 30 A - 1.46 1.87
I
F
= 15 A, T
J
= 150 °C - 1.08 1.3
I
F
= 30 A, T
J
= 150 °C - 1.32 -
Reverse leakage current I
R
V
R
= V
R
rated - - 15
μA
T
J
= 125 °C, V
R
= V
R
rated - - 500
Junction capacitance C
T
V
R
= 600 V - 15 - pF
VS-C4ZU3006FP-E3
www.vishay.com
Vishay Semiconductors
Revision: 26-Jul-16
2
Document Number: 95644
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time, per leg t
rr
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 37 -
nsT
J
= 25 °C
I
F
= 15 A
dI
F
/dt = 1000 A/μs
V
R
= 400 V
-73-
T
J
= 125 °C - 83 -
Peak recovery current, per leg I
RRM
T
J
= 25 °C - 13 -
A
T
J
= 125 °C - 21 -
Reverse recovery charge, per leg Q
rr
T
J
= 25 °C - 500 -
nC
T
J
= 125 °C - 1100 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Thermal resistance, junction to case R
thJC
--3°C/W
Thermal resistance, case to heatsink R
thCS
-0.5-
Weight
-6.0- g
-0.21- oz.
Mounting torque
4.0
(3.5)
-
6.0
(5.3)
kgf · cm
(lbf · in)
Marking device Case style TO-3PF C4ZU3006FP
1
10
100
1000
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
I
F
- Instantaneous Forward Current (A)
V
F
-Forward Voltage Drop (V)
T
J
= 150 ° C
T
J
= 25 °C
T
J
= 175 °C
T
J
= 125 ° C
0.001
0.01
0.1
1
10
100
1000
0 100 200 300 400 500 600
I
R
- Reverse Current (μA)
V
R
- Reverse Voltage (V)
25 °C
125 °C
150 °C
175 °C
VS-C4ZU3006FP-E3
www.vishay.com
Vishay Semiconductors
Revision: 26-Jul-16
3
Document Number: 95644
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
10
100
1000
0 100 200 300 400 500 600
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
0.1
1
10
0.001 0.01 0.1 1 10 100
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
t
1
- Rectangular Pulse Duration (s)
0.50
0.20
0.10
0.05
0.02
0.01
Single pulse
50
100
150
200
0 3 6 9 121518
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
Square wave (D = 0.50)
100 % rated V
R
applied
DC
0
5
10
15
20
25
30
0 5 10 15 20 25
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
D = 0.01
D = 0.05
D = 0.10
D = 0.20
D = 0.50
RMS limit
P1-P3P4-P5

VS-C4ZU3006FP-E3

Mfr. #:
Buy VS-C4ZU3006FP-E3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers FRED Pt - TO-3PF
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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