OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

RBO08-40T

P1-P3P4-P6P7-P9
1/9
RBO08-40G/T
®
REVERSED BATTERY AND
OVERVOLTAGE PROTECTION
October 2003 - Ed: 3
Application Specific Discretes
A.S.D.™
D
2
PAK
RBO08-40G
TO220-AB
RBO08-40T
TM : TRANSIL and ASD are trademarks of STMicroelectronics.
■
8A DIODE TO GUARD AGAINST BATTERY
REVERSAL.
■
NEGATIVE OVERVOLTAGE PROTECTION
BY CLAMPING.
■
COMPLIANT WITH ISO/DTR 7637 STANDARD
FOR PULSES 1, 2, 3a and 3b.
■
SUITABLE FOR AUTOPROTECTED ALTER-
NATOR ENVIRONMENT.
■
BREAKDOWN VOLTAGE : 24 V min.
■
CLAMPING VOLTAGE:±40Vmax.
■
MONOLITHIC STRUCTURE FOR GREATER
RELIABILITY.
FEATURES
Designed to protect against battery reversal and
overvoltages in automotive applications, this
monolithic component offers multiple functions in
the same package :
D1 : reversed battery protection
T1 : clamping against negative overvoltages
T2 : Transil function for overvoltage protection.
DESCRIPTION
FUNCTIONAL DIAGRAM
1
2
3
RBO08-40G / RBO08-40T
2/9
Symbol Parameter Value Unit
I
FSM
Non repetitive surge peak forward current
(Diode D1)
tp=10ms 80 A
I
F
DC forward current (Diode D1)
Tc = 75°C 8 A
P
PP
Peak pulse power between Input and Output
(Transil T1) see note 1 Tj initial = 25°C
10/1000 µs 600 W
P
PP
Peak pulse power between Pins 3 and 2 (10/1000µs)
1500 W
T
stg
Tj
Storage temperature range
Maximum junction temperature
-40to+150
150
°C
T
L
Maximum lead temperature for soldering during 10 s
at 4.5mm from case for TO220-AB
260 °C
Note 1 : for a surge greater than the maximum value, the device will fail in short-circuit..
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
Rth (j-c)
Junction to case
RBO08-40M
RBO08-40T
2.4
2.4
°C/W
THERMAL RESISTANCE
D1
T1
2
31
V
CL
31 V
RM
31
V
F
13
V13
I13
I
RM
31
I
R
31
Ipp31
V
BR
31
T2
I
F
I
pp
32
V
RM
32 V
B
R
32 V
C
L
32
3
2
1
V32
I32
I
R
32
I
RM
32
RBO08-40G / RBO08-40T
3/9
Symbol Test Conditions
Value
Unit
Min. Typ. Max.
V
F13
I
F
=8A
RBO08-40G
1.5 V
RBO08-40T
1.7 V
I
F
=8A@T
amb
= 25°C
1.45 V
V
F13
I
F
=4A
RBO08-40G
1.3 V
RBO08-40T
1.35 V
I
F
=4A@T
amb
= 25°C
1.2 V
V
F13
I
F
=1A
1.1 V
I
F
=1A@T
amb
= 25°C
1.0 V
I
F
=1A@Tj=85°C
0.9 V
ELECTRICAL CHARACTERISTICS : DIODE D1 (- 40°C < T
amb
< + 85°C)
Symbol Parameter
V
RM31
/V
RM32
Stand-off voltage Transil T1 / Transil T2.
V
BR31
/V
BR32
Breakdown voltage Transil T1 / Transil T2.
I
R31
/I
R32
Leakage current Transil T1 / Transil T2.
V
CL31
/V
CL32
Clamping voltage Transil T1 / Transil T2.
V
F13
Forward voltage drop Diode D1.
I
PP
Peak pulse current.
αT
Temperature coefficient of V
BR
.
C
31
/C
32
Capacitance Transil T1 / Transil T2.
Symbol Test Conditions
Value
Unit
Min. Typ. Max.
V
BR 31
I
R
=1mA
22 35 V
V
BR 31
I
R
= 1 mA, T
amb
= 25°C
24 32 V
I
RM 31
V
RM
=20V
50 µA
I
RM 31
V
RM
=20V,T
amb
= 25°C
10 µA
V
CL 31
I
PP
= 15A, Tj initial = 25°C
10/1000µs 40 V
α T
Temperature coefficient of V
BR
910
-4
/°C
C
31
F = 1MHz V
R
=0V
1000 pF
ELECTRICAL CHARACTERISTICS : TRANSIL T1 (- 40°C < T
amb
< + 85°C)
Symbol Test Conditions
Value
Unit
Min. Typ. Max.
V
BR 32
I
R
=1mA
22 35 V
V
BR 32
I
R
= 1 mA, T
amb
= 25°C
24 32 V
I
RM 32
V
RM
=20V
50 µA
I
RM 32
V
RM
=20V,T
amb
= 25°C
10 µA
V
CL 32
I
PP
= 37.5 A
10/1000µs 40 V
α T
Temperature coefficient of V
BR
8.5 10
-4
/⊃
C
ELECTRICAL CHARACTERISTICS : TRANSIL T2 (- 40°C < T
amb
< + 85°C)
P1-P3P4-P6P7-P9

RBO08-40T

Mfr. #:
Buy RBO08-40T
Manufacturer:
STMicroelectronics
Description:
TVS DIODE 20V 40V TO220AB
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet