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2SC4617G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 6
1 Publication Order Number:
2SC4617/D
2SC4617G, S2SC4617G
NPN Silicon General
Purpose Amplifier
Transistor
This NPN transistor is designed for general purpose amplifier
applications. This device is housed in the SC−75/SOT-416 package
which is designed for low power surface mount applications, where
board space is at a premium.
Features
• Reduces Board Space
• High h
FE
, 210−460 (typical)
• Low V
CE(sat)
, < 0.5 V
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (T
J
= 25°C)
Rating
Symbol Value Unit
Collector-Base Voltage V
(BR)CBO
50 Vdc
Collector-Emitter Voltage V
(BR)CEO
50 Vdc
Emitter-Base Voltage V
(BR)EBO
5.0 Vdc
Collector Current − Continuous I
C
100 mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Power Dissipation (Note 1) P
D
125 mW
Junction Temperature T
J
150 °C
Storage Temperature Range T
stg
−55 ~ +150 °C
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
NPN GENERAL PURPOSE
AMPLIFIER TRANSISTORS
SURFACE MOUNT
http://onsemi.com
SC−75
CASE 463−01
STYLE 1
MARKING DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
1
B9 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
B9 M G
G
Device Package Shipping
†
ORDERING INFORMATION
2SC4617G SC−75
(Pb−Free)
3,000/Tape & Ree
l
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
2SC4617T1G SC−75
(Pb−Free)
3,000/Tape & Ree
l
S2SC4617G SC−75
(Pb−Free)
3,000/Tape & Ree
l
2SC4617G, S2SC4617G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Characteristic
Symbol Min Typ Max Unit
Collector-Base Breakdown Voltage (I
C
= 50 mAdc, I
E
= 0)
V
(BR)CBO
50 − − Vdc
Collector-Emitter Breakdown Voltage (I
C
= 1.0 mAdc, I
B
= 0) V
(BR)CEO
50 − − Vdc
Emitter-Base Breakdown Voltage (I
E
= 50 mAdc, I
E
= 0)
V
(BR)EBO
5.0 − − Vdc
Collector-Base Cutoff Current (V
CB
= 30 Vdc, I
E
= 0) I
CBO
− − 0.5
mA
Emitter-Base Cutoff Current (V
EB
= 4.0 Vdc, I
B
= 0) I
EBO
− − 0.5
mA
Collector-Emitter Saturation Voltage (Note 2)
(I
C
= 60 mAdc, I
B
= 5.0 mAdc)
V
CE(sat)
− − 0.4
Vdc
DC Current Gain (Note 2)
(V
CE
= 6.0 Vdc, I
C
= 1.0 mAdc)
h
FE
120 − 560
−
Transition Frequency (V
CE
= 12 Vdc, I
C
= 2.0 mAdc, f = 30 MHz) f
T
− 180 − MHz
Output Capacitance (V
CB
= 12 Vdc, I
C
= 0 Adc, f = 1 MHz) C
OB
− 2.0 − pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
2SC4617G, S2SC4617G
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. I
C
− V
CE
V
CE
, COLLECTOR VOLTAGE (V)
Figure 2. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 3. Collector Saturation Region
I
B
, BASE CURRENT (mA)
Figure 4. On Voltage
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
60
0
50
40
30
20
10
0
24 68
T
A
= 25°C
160 mA
140 mA
120 mA
100 mA
80 mA
60 mA
40 mA
I
B
= 20 mA
DC CURRENT GAIN
1000
0.1
100
10
1 10 100
T
A
= 25°C
T
A
= - 25°C
T
A
= 75°C
V
CE
= 10 V
V
CE
, COLLECTOR‐EMITTER VOLTAGE (V)
2
0.01
1.5
1
0.5
0
0.1 1 10 100
T
A
= 25°C
COLLECTOR VOLTAGE (mV)
900
0.2
800
700
600
500
400
300
200
100
0.5 1 5 10 20 40 60 80 100 150 200
T
A
= 25°C
V
CE
= 5 V
0
Figure 5. Capacitance
V
CB
(V)
Figure 6. Capacitance
V
EB
(V)
20
0
18
16
14
12
10
1234
7
0
C
ib
, INPUT CAPACITANCE (pF)
6
5
4
3
2
1
10 20 30 40
C
ob
, CAPACITANCE (pF)
100 mA
50 mA
I
C
= 200 mA
20 mA
10 mA
P1-P3P4-P4

2SC4617G

Mfr. #:
Buy 2SC4617G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 100mA 50V NPN
Lifecycle:
New from this manufacturer.
Delivery:
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