MGA-83563
+22 dBm P
SAT
3V Power Amplier
for 0.5 – 6 GHz Applications
Data Sheet
Features
x Lead-free Option Available
x +22 dBm P
SAT
at 2.4 GHz, 3.0 V
+23 dBm P
SAT
at 2.4 GHz, 3.6V
x 22 dB Small Signal Gain at 2.4 GHz
x Wide Frequency Range 0.5 to 6 GHz
x Single 3V Supply
x 37% Power Added Eciency
x Ultra Miniature Package
Applications
x Amplier for Driver and Output Applications
Surface Mount Package
SOT-363 (SC-70)
Pin Connections and Package Marking
Note:
Package marking provides orientation and identication;
“x” is date code.
Description
Avagos MGA-83563 is an easy-to-use GaAs RFIC amplier
that oers excellent power output and eciency. This
part is targeted for 3V applications where constant-en-
velope modulation is used. The output of the amplier is
matched internally to 50Ω. However, an external match
can be added for maximum eciency and power out
(PAE = 37%, P
o
= 22 dBm). The input is easily matched
to 50 Ω.
Due to the high power output of this device, it is recom-
mended for use under a specic set of operating condi-
tions. The thermal sections of the Applications Informa-
tion explain this in detail.
The circuit uses state-of-the-art PHEMT technology with
proven reliability. On-chip bias circuitry allows operation
from single supply voltage.
GND
GND
83x
INPUT
GND
V
d1
OUTPUT
and V
d2
16
25
34
Attention:
Observe precautions for
handling electrostatic sensitive devices.
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
Equivalent Circuit
(Simplied)
OUTPUT
and V
d2
BIAS
INPUT
V
d1
BIAS
GROUND
2
Thermal Resistance
[2]
:
T
ch to c
= 175°C/W
Notes:
1. Operation of this device above any one
of these limits may cause permanent
damage.
2. T
C
= 25°C (T
C
is dened to be the tempera-
ture at the package pins where contact is
made to the circuit board).
MGA-83563 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum
[1]
V Maximum DC Supply Voltage V 4
P
in
CW RF Input Power dBm +13
T
ch
Channel Temperature °C 165
T
STG
Storage Temperature °C -65 to 150
0
200
400
800
600
700
500
300
100
10 30 50 70 90 150110
130
POWER DISSIPATED AS HEAT (mW)
Pd = (VOLTAGE) x (CURRENT) – (Pout)
CASE TEMPERATURE (C)
1 x 10
6
Hrs MTTF
Temperature/Power Derating Curve.
Figure 1. MGA-83563 Final Production Test Circuit.
Figure 2. MGA-83563 Test Circuit for Characterization.
RF
INPUT
1.2 nH
2.2 nH18 nH20 pF
3.0V
1 pF
50 pF
RF
OUTPUT
83
RF
INPUT
Circuit A: L1 = 2.2 nH for 0.1 to 3 GHz
Circuit B: L1 = 0 nH (capacitor as close as possible) for 3 to 6 GHz
L120 pF
V
d
RF
OUTPUT
83
Tuner
Tuner
Bias
Tee
3
MGA-83563 Electrical Specications,
V
d
= 3 V, T
C
= 25°C, using test circuit of Figure 2, unless noted.
Std.
Symbol Parameters and Test Conditions Units Min. Typ. Max. Dev.
[4]
P
SAT
Saturated Output Power
[3]
f = 2.4 GHz dBm 20.5 22.4 0.75
PAE
Power Added Eciency
[3]
f = 2.4 GHz % 25 37 2.5
I
d
Device Current
[3,5]
mA 152 200 12.4
Gain Small Signal Gain f = 0.9 GHz dB 20
f = 1.5 GHz 22
f = 2.0 GHz 23
f = 2.4 GHz 22
f = 4.0 GHz 22
f = 5.0 GHz 19
f = 6.0 GHz 17
P
SAT
Saturated Output Power f = 0.9 GHz dBm 20.9
f = 1.5 GHz 21.7
f = 2.0 GHz 21.8
f = 2.4 GHz 22
f = 4.0 GHz 21.9
f = 5.0 GHz 19.7
f = 6.0 GHz 18.2
PAE Power Added Eciency f = 0.9 GHz % 41
f = 1.5 GHz 41
f = 2.0 GHz 40
f = 2.4 GHz 37
f = 4.0 GHz 32
f = 5.0 GHz 18
f = 6.0 GHz 14
P
1 dB
Output Power at 1 dB Gain Compression
[5]
f = 0.9 GHz dBm 19.1
f = 1.5 GHz 19.7
f = 2.0 GHz 19.7
f = 2.4 GHz 19.2
f = 4.0 GHz 18.1
f = 5.0 GHz 16
f = 6.0 GHz 15
VSWR
in
Input VSWR into 50 Ω
Circuit A
f = 0.9 to 1.7 GHz 3.5
f
= 1.8 to 3.0 GHz 2.6
Circuit B f = 3.0 to 6.0 GHz 2.3
VSWR
out
Output VSWR into 50 Ω
Circuit A
f = 0.9 to 2.0 GHz 1.4
f
= 2.0 to 3.0 GHz 2.5
Circuit B f = 3.0 to 4.0 GHz 3.5
f = 4.0 to 6.0 GHz 4.5
ISOL Isolation f = 0.9 to 3.0 GHz dB -38
f = 3.0 to 6.0 GHz -30
IP
3
Third Order Intercept Point f = 0.9 GHz to 6.0 GHz dBm 29
Notes:
3. Measured using the nal test circuit of Figure 1 with an input power of +4 dBm.
4. Standard Deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during the initial characteriza-
tion of this product, and is intended to be used as an estimate for distribution of the typical specication.
5. For linear operation, refer to thermal sections in the Applications section of this data sheet.

MGA-83563-BLKG

Mfr. #:
Manufacturer:
Broadcom / Avago
Description:
RF Amplifier 3 SV 22 dB
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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