VBT1045BP-M3
www.vishay.com
Vishay General Semiconductor
Revision: 30-Apr-13
1
Document Number: 87967
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low V
F
= 0.41 V at I
F
= 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
Notes
(1)
With heatsink
(2)
Meets the requirements of IEC 61215 ed.2 bypass diode thermal test
PRIMARY CHARACTERISTCS
Package TO-263AB
I
F(DC)
10 A
V
RRM
45 V
I
FSM
100 A
V
F
at I
F
= 10 A 0.52 V
T
OP
max. (AC mode) 150 °C
T
J
max. (DC forward current) 200 °C
Diode variation Single die
TMBS
®
TO-263AB
1
2
K
PIN 1
PIN 2
K
HEATSINK
VBT1045BP
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VBT1045BP UNIT
Maximum repetitive peak reverse voltage V
RRM
45 V
Maximum DC forward bypassing current (fig. 1) I
F(DC)
(1)
10 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
100 A
Operating junction temperature range (AC mode) T
OP
- 40 to + 150 °C
Junction temperature in DC forward current
without reverse bias, t 1 h
T
J
(2)
200 °C
