SI2315BDS-T1-E3 Datasheet SI2315BDS-T1-E3, SI2315BDS-T1-GE3 | P1-P3

Vishay Siliconix

Si2315BDS

Document Number: 72014

S-80642-Rev. E, 24-Mar-08

www.vishay.com

1

P-Channel 1.8-V (G-S) MOSFET

FEATURES

• Halogen-free Option Available

• TrenchFET

®

Power MOSFETs: 1.8 V Rated

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)I

D

(A)

- 12

0.050 at V

GS

= - 4.5 V

- 3.85

0.065 at V

GS

= - 2.5 V

- 3.4

0.100 at V

GS

= - 1.8V

- 2.7

Ordering Information: Si2315BDS-T1

Si2315BDS-T1-E3 (Lead (Pb)-free)

Si2315BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

G

S

D

Top View

2

3

TO-236

(SOT-23)

1

Si2315BDS *(M5)

* Marking Code

Notes:

a. Surface Mounted on FR4 board.

b. t ≤ 5 s.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

V

DS

- 12

V

Gate-Source Voltage

V

GS

± 8

Continuous Drain Current (T

J

= 150 °C)

a

T

A

= 25 °C

I

D

- 3.85 - 3.0

A

T

A

= 70 °C

- 3.0 - 2.45

Pulsed Drain Current

a

I

DM

- 12

Continuous Source Current (Diode Conduction)

a

I

S

- 1.0 - 0.62

Power Dissipation

a

T

A

= 25 °C

P

D

1.19 0.75

W

T

A

= 70 °C

0.76 0.48

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typ. Max. Unit

Maximum Junction-to-Ambient

a

t ≤ 5 s

R

thJA

85 105

°C/W

Steady State 130 166

Maximum Junction-to-Foot (Drain) Steady State

R

thJF

60 75

Available

Pb-free

RoHS*

COMPLIANT

www.vishay.com

2

Document Number: 72014

S-80642-Rev. E, 24-Mar-08

Vishay Siliconix

Si2315BDS

Notes:

a. For DESIGN AID ONLY, not subject to production testing.

b. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %.

c. Switching time is essentially independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions

Limits

Unit

Min. Typ. Max.

Static

Drain-Source Breakdown Voltage

V

(BR)DSS

V

GS

= 0 V, I

D

= - 10 µA

- 12

V

Gate-Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= - 250 µA

- 0.45 - 0.90

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 8 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= - 12 V, V

GS

= 0 V

- 1

µA

V

DS

= - 12 V, V

GS

= 0 V, T

J

= 55 °C

- 10

On-State Drain Current

a

I

D(on)

V

DS

≤ - 5 V, V

GS

= - 4.5 V

- 6

A

V

DS

≤ - 5 V, V

GS

= - 2.5 V

- 3

Drain-Source On Resistance

a

R

DS(on)

V

GS

= - 4.5 V, I

D

= - 3.85 A

0.040 0.050

Ω

V

GS

= - 2.5 V, I

D

= - 3.4 A

0.050 0.065

V

GS

= - 1.8 V, I

D

= - 2.7 A

0.071 0.100

Forward Transconductance

a

g

fs

V

DS

= - 5 V, I

D

= - 3.85 A

7S

Diode Forward Voltage

a

V

SD

I

S

= - 1.6 A, V

GS

= 0 V

- 1.2 V

Dynamic

b

Total Gate Charge

Q

g

V

DS

= - 6 V, V

GS

= - 4.5 V

I

D

≅ - 3.85 A

815

nCGate-Source Charge

Q

gs

1.1

Gate-Drain Charge

Q

gd

2.3

Input Capacitance

C

iss

V

DS

= - 6 V, V

GS

= 0 V, f = 1 MHz

715

pFOutput Capacitance

C

oss

275

Reverse Transfer Capacitance

C

rss

200

Switching

b

Tur n - O n T i m e

t

d(on)

V

DD

= - 6 V, R

L

= 6 Ω

I

D

≅ - 1.0 A, V

GEN

= - 4.5 V

R

G

= 6 Ω

15 20

ns

t

r

35 50

Turn-Off Time

t

d(off)

50 70

t

f

50 75

Document Number: 72014

S-80642-Rev. E, 24-Mar-08

www.vishay.com

3

Vishay Siliconix

Si2315BDS

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

2

4

6

8

10

12

0123456

V

GS

= 4.5 thru 2 V

1.5 V

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

0.00

0.05

0.10

0.15

0.20

0.25

0.30

024681012

V

GS

= 4.5 V

V

GS

= 2.5 V

- On-Resistance (Ω)R

DS(on)

I

D

- Drain Current (A)

V

GS

= 1.8 V

0

1

2

3

4

5

0246810

V

DS

= 6 V

I

D

= 3.5 A

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

2

4

6

8

10

12

0.0 0.5 1.0 1.5 2.0 2.5

25 °C

T

C

= 125 °C

- 55 °C

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

0

200

400

600

800

1000

1200

024681012

C

rss

C

oss

C

iss

V

DS

- Drain-to-Source Voltage (V)

C - Capacitance (pF)

0.6

0.8

1.0

1.2

1.4

1.6

- 50 - 25 0 25 50 75 100 125 150

V

GS

= 4.5 V

I

D

= 3.5 A

T

J

- Junction Temperature (°C)

(Normalized)

- On-Resistance R

DS(on)

SI2315BDS-T1-E3

SI2315BDS-T1-E3

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