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IRLR014NTRL

P1-P3P4-P6P7-P9P10-P11
IRLR/U014N
www.irf.com 7
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple ≤ 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
* V
GS
= 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
R
G
V
DD
• dv/dt controlled by R
G
• Driver same type as D.U.T.
• I
SD
controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
IRLR/U014N
8 www.irf.com
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
TO-252AA (D-PAK)
Part Marking Information
6.73 (.265)
6.35 (.250)
-A-
4
123
6.22 (.245)
5.97 (.235)
-B-
3X
0.89 (.035)
0.64 (.025)
0.25 (.010) M A M B
4.57 (.180)
2.28 (.090)
2X
1.14 (.045)
0.76 (.030)
1.52 (.060)
1.15 (.045)
1.02 (.040)
1.64 (.025)
5.46 (.215)
5.21 (.205)
1.27 (.050)
0.88 (.035)
2.38 (.094)
2.19 (.086)
1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018)
6.45 (.245)
5.68 (.224)
0.51 (.020)
MIN.
0.58 (.023)
0.46 (.018)
LEAD ASSIGNMENTS
1-GATE
2 - DRAIN
3-SOURCE
4 - DRAIN
10.42 (.410)
9.40 (.370)
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE TO-252AA.
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.006).
I
N
T
E
R
N
A
T
I
O
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A
L
L
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G
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C
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F
I
E
R
3
4
1
2
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R
F
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1
2
0
9
1
6
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:
W
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N
I
R
F
R
1
2
0
Y
E
A
R
9
=
1
9
9
9
D
A
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C
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D
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L
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A
W
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K
1
6
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B
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"
A
"
A
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M
B
L
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D
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W
W
1
6
,
1
9
9
9
L
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C
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D
E
1
2
3
4
P
A
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B
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R
IRLR/U014N
www.irf.com 9
I
R
F
U
1
2
0
9
1
9
A
R
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C
T
I
F
I
E
R
L
O
G
O
I
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E
R
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A
T
I
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N
A
L
A
S
S
E
M
B
L
Y
L
O
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C
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D
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5
6
7
8
E
X
A
M
P
L
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:
W
I
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H
A
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S
E
M
B
L
Y
T
H
I
S
I
S
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I
R
F
R
1
2
0
W
E
E
K
1
9
L
I
N
E
A
Y
E
A
R
9
=
1
9
9
9
D
A
T
E
C
O
D
E
P
A
R
T
N
U
M
B
E
R
I
N
T
H
E
A
S
S
E
M
B
L
Y
L
I
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E
"
A
"
A
S
S
E
M
B
L
E
D
O
N
W
W
1
9
,
1
9
9
9
L
O
T
C
O
D
E
5
6
7
8
Package Outline
TO-251AA Outline
Dimensions are shown in millimeters (inches)
TO-251AA (I-PAK)
Part Marking Information
6.73 (.265)
6.35 (.250)
-A-
6.22 (.245)
5.97 (.235)
-B-
3X
0.89 (.035)
0.64 (.025)
0.25 (.010) M A M B
2.28 (.090)
1.14 (.045)
0.76 (.030)
5.46 (.215)
5.21 (.205)
1.27 (.050)
0.88 (.035)
2.38 (.094)
2.19 (.086)
1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018)
LEAD ASSIGNMENTS
1-GATE
2-DRAIN
3 - SOURCE
4-DRAIN
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE TO-252AA.
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.006).
9.65 (.380)
8.89 (.350)
2X
3X
2.28 (.090)
1.91 (.075)
1.52 (.060)
1.15 (.045)
4
123
6.45 (.245)
5.68 (.224)
0.58 (.023)
0.46 (.018)
P1-P3P4-P6P7-P9P10-P11

IRLR014NTRL

Mfr. #:
Buy IRLR014NTRL
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 55V 10A DPAK
Lifecycle:
New from this manufacturer.
Delivery:
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