Technical Note
10/12
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2011.10 - Rev.B
© 2011 ROHM Co., Ltd. All rights reserved.
BD33C0AWFP, BD50C0AWFP
10. Output pin
It is necessary to place capacitors between each output pin and GND to prevent oscillation on the output. Usable
capacitance values range from 1µF to 1000µF. Ceramic capacitors can be used as long as their ESR value is low
enough to prevent oscillation (0.001 to 20). Abrupt fluctuations in input voltage and load conditions may affect the
output voltage. Output capacitance values should be determined only through sufficient testing of the actual
application.
11. CTL pin
Do not make voltage level of chip enable pin keep floating level, or in between VthH and VthL. Otherwise, the output
voltage would be unstable or indefinite.
12. For a steep change of the Vcc voltage
Because MOS FET for output Transistor is used when an input voltage change is very steep, it may evoke large current.
When selecting the value of external circuit constants, please make sure that the operation on the actual application
takes these conditions into account.
13. For an infinitesimal fluctuations of output voltage.
At the use of the application that infinitesimal fluctuations of output voltage caused by some factors (e.g. disturbance
noise, input voltage fluctuations, load fluctuations, etc.), please take enough measures to avoid some influence (e.g.
insert the filter, etc.).
14. Over current protection circuit (OCP)
The IC incorporates an integrated over-current protection circuit that operates in accordance with the rated output
capacity. This circuit serves to protect the IC from damage when the load becomes shorted. It is also designed to limit
output current (without latching) in the event of a large and instantaneous current flow from a large capacitor or other
component. These protection circuits are effective in preventing damage due to sudden and unexpected accidents.
However, the IC should not be used in applications characterized by the continuous or transitive operation of the
protection circuits.
15. Thermal shutdown circuit (TSD)
The IC incorporates a built-in thermal shutdown circuit, which is designed to turn the IC off completely in the event of
thermal overload. It is not designed to protect the IC from damage or guarantee its operation. ICs should not be used
after this function has activated, or in applications where the operation of this circuit is assumed.
Vcc=4.3V25V(BD33C0AWFP)/6V25V(BD50C0AWFP)
Ta=-40
℃~+105
Cin=2.2
μF100μF Cout=1μF100μF
0.001
0.01
0.1
1
10
100
0 200 400 600 800 1000
Io(mA)
Cou t_ESR (Ω)
Unstable operating region
Stable operating region
Cout_ESR vs Io(reference data) Cin vs Cout(reference data)
Operation Notes 10 Measurement circuit
BD33C0AWFP
Vcc=4.3V
25V Vo=3.3V
Ta=-40
℃~+105Io=0A1A
1
10
100
110100
CoutμF)
Cin(μF
2.2
Unstable
operating region
Stable operating region
BD50C0AWFP
Vcc=6V
25V Vo=5V
Ta=-40
℃~+105Io=0A1A
1
10
100
110100
CoutF)
Cin(μF
Stable operating region
Cout(1.0μF~)
Vo
CTL
GND
Cin
VCTL
(5V)
BD33C0AWFP (2.2μF)
ESR
Io(ROUT)
(0.001Ω~)
Vcc
BD33C0AWFP(4.3V25V)
N.C.
BD50C0AWFP(6V25V)
BD50C0AWFP (1.0μF)
Technical Note
11/12
www.rohm.com
2011.10 - Rev.B
© 2011 ROHM Co., Ltd. All rights reserved.
BD33C0AWFP, BD50C0AWFP
16. Applications or inspection processes where the potential of the Vcc pin or other pins may be reversed from their normal
state may cause damage to the IC's internal circuitry or elements. Use an output pin capacitance of 1000µF or lower in
case Vcc is shorted with the GND pin while the external capacitor is charged. Insert a diode in series with Vcc to prevent
reverse current flow, or insert bypass diodes between Vcc and each pin.
17. Positive voltage surges on VCC pin
A power zener diode should be inserted between VCC and GND for protection against voltage surges of more than 35V
on the VCC pin.
18. Negative voltage surges on VCC pin
A schottky barrier diode should be inserted between VCC and GND for protection against voltages lower than GND on
the VCC pin.
19. Output protection diode
Loads with large inductance components may cause reverse current flow during startup or shutdown. In such cases, a
protection diode should be inserted on the output to protect the IC.
20. Regarding input pins of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. PN junctions are formed at the intersection of these P layers with the N layers of other elements, creating
parasitic diodes and/or transistors. For example (refer to the figure below):
When GND > Pin A and GND > Pin B, the PN junction operates as a parasitic diode
When GND > Pin B, the PN junction operates as a parasitic transistor
Parasitic diodes occur inevitably in the structure of the IC, and the operation of these parasitic diodes can result in
mutual interference among circuits, operational faults, or physical damage. Accordingly, conditions that cause these
diodes to operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate)
should be avoided.
Example of Simple Monolithic IC Architecture
Parasitic elements
(Pin A)
Parasitic elements
or transistors
(Pin B)
C
B
E
N
P
N
N
P+
P+
Parasitic elements
or transistors
P substrate
(Pin B)
C
B
E
Transistor (NPN)
(Pin A)
N
P
N
N
P+ P+
Resistor
Parasitic elements
P
GND GND
GND
N
Vcc
GND
Vcc
GND
Technical Note
12/12
www.rohm.com
2011.10 - Rev.B
© 2011 ROHM Co., Ltd. All rights reserved.
BD33C0AWFP, BD50C0AWFP
Ordering part number
B D X X C 0 A W F P - E 2
Part No. Output voltage
33: 3.3V output
50:5.0V
Current capacity
C0A:Output 1A
Shutdown switch
W : With switch
None : Without
switch
Package
FP : TO252
Packaging specification
E2: Embossed tape and reel

BD33C0AWFP-E2

Mfr. #:
Manufacturer:
Description:
LDO Voltage Regulators IC Pwr Linear Reg Single Output LDO
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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