November 2010 Doc ID 13696 Rev 5 1/15
15
STGF30NC60S
STGP30NC60S, STGWF30NC60S
30 A, 600 V, fast IGBT
Features
Optimized performance for medium operating
frequencies up to 5 kHz in hard switching
Low on-voltage drop (V
CE(sat)
)
High current capability
Application
Motor drive
Description
This device utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
Figure 1. Internal schematic diagram
TO-220
1
2
3
TO-220FP
1
2
3
TA B
1
111
2
3
TO-3PF
Table 1. Device summary
Order codes Marking Package Packaging
STGF30NC60S GF30NC60S TO-220FP
Tu b eSTGP30NC60S GP30NC60S TO-220
STGWF30NC60S GWF30NC60S TO-3PF
www.st.com
Contents STGF30NC60S, STGP30NC60S, STGWF30NC60S
2/15 Doc ID 13696 Rev 5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
STGF30NC60S, STGP30NC60S, STGWF30NC60S Electrical ratings
Doc ID 13696 Rev 5 3/15
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220 TO-220FP TO-3PF
V
CES
Collector-emitter voltage (V
GE
= 0) 600 V
I
C
(1)
1. Calculated according to the iterative formula:
Continuous collector current at T
C
= 25 °C 55 22 35 A
I
C
(1)
Continuous collector current at T
C
= 100 °C 35 11 18 A
I
CL
(2)
2. V
clamp
= 80%,(V
CES
), T
j
=150 °C, R
G
= 10 Ω, V
GE
= 15 V
Turn-off latching current 150 A
I
CP
(3)
3. Pulse width limited by maximum junction temperature and turn-off within RBSOA
Pulsed collector current 150 A
V
GE
Gate-emitter voltage ±20 V
V
ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;T
C
=25 °C)
2500 V
P
TOT
Total dissipation at T
C
= 25 °C 175 40 79 W
T
j
Operating junction temperature - 55 to 150 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
TO-220 TO-220FP TO-3PF
R
thj-case
Thermal resistance junction-case 0.7 3.1 1.58 °C/W
R
thj-amb
Thermal resistance junction-ambient 62.5 50 °C/W
I
C
T
C
()
T
jmax()
T
C
R
thj c
V
CE sat()max()
T
jmax()
I
C
T
C
(),()×
----------------------------------------------------------------------------------------------------------=

STGWF30NC60S

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors 30A 600V Fast IGBT 5kHz 1.9 VCE
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet