MC74VHCT04ADTR2

© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 5
1 Publication Order Number:
MC74VHCT04A/D
MC74VHCT04A
Hex Inverter
The MC74VHCT04A is an advanced high speed CMOS inverter
fabricated with silicon gate CMOS technology. It achieves high speed
operation similar to equivalent Bipolar Schottky TTL while
maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output. The
inputs tolerate voltages up to 7 V, allowing the interface of 5 V systems
to 3 V systems.
The VHCT inputs are compatible with TTL levels. This device can
be used as a level converter for interfacing 3.3 V to 5.0 V, because it
has full 5 V CMOS level output swings.
The VHCT04A input structures provide protection when voltages
between 0 V and 5.5 V are applied, regardless of the supply voltage.
The output structures also provide protection when V
CC
= 0 V. These
input and output structures help prevent device destruction caused by
supply voltage − input/output voltage mismatch, battery backup, hot
insertion, etc.
Features
High Speed: t
PD
= 4.7 ns (Typ) at V
CC
= 5 V
Low Power Dissipation: I
CC
= 2 μA (Max) at T
A
= 25°C
TTL−Compatible Inputs: V
IL
= 0.8 V; V
IH
= 2.0 V
Power Down Protection Provided on Inputs and Outputs
Balanced Propagation Delays
Designed for 4.5 V to 5.5 V Operating Range
Low Noise: V
OLP
= 1.0 V (Max)
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300 mA
ESD Performance: HBM > 2000 V; Machine Model > 200 V
Chip Complexity: 48 FETs or 12 Equivalent Gates
These Devices are Pb−Free and are RoHS Compliant
MARKING
DIAGRAMS
TSSOP−14
DT SUFFIX
CASE 948G
1
SOIC−14
D SUFFIX
CASE 751A
1
http://onsemi.com
A = Assembly Location
WL, L = Wafer Lot
Y = Year
WW, W = Work Week
G or G = Pb−Free Package
VHCT04AG
AWLYWW
1
14
VHCT
04A
ALYWG
G
1
14
(Note: Microdot may be in either location)
Device Package Shipping
ORDERING INFORMATION
MC74VHCT04ADR2G SOIC−14
(Pb−Free)
TSSOP14
(Pb−Free)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MC74VHCT04ADTR2G 2500 / Tape &
Reel
2500 / Tape &
Reel
MC74VHCT04A
http://onsemi.com
2
Figure 1. Logic Diagram
Y1A1
A2
A3
A4
A5
A6
Y2
Y3
Y4
Y5
Y6
1
3
5
9
11
13
2
4
6
8
10
12
Y = A
Figure 2. Pinout: 14−Lead Packages (Top View)
1314 12 11 10 9 8
21 34567
V
CC
A6 Y6 A5 Y5 A4 Y4
A1 Y1 A2 Y2 A3 Y3 GND
L
H
FUNCTION TABLE
Inputs Outputs
A
H
L
Y
MC74VHCT04A
http://onsemi.com
3
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage – 0.5 to + 7.0 V
V
in
DC Input Voltage – 0.5 to + 7.0 V
V
out
DC Output Voltage V
CC
= 0
High or Low State
– 0.5 to + 7.0
– 0.5 to V
CC
+ 0.5
V
I
IK
Input Diode Current − 20 mA
I
OK
Output Diode Current (V
OUT
< GND; V
OUT
> V
CC
) ± 20 mA
I
out
DC Output Current, per Pin ± 25 mA
I
CC
DC Supply Current, V
CC
and GND Pins ± 50 mA
P
D
Power Dissipation in Still Air, SOIC Packages†
TSSOP Package†
500
450
mW
T
stg
Storage Temperature – 65 to + 150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of
these limits are exceeded, device functionality should not be assumed, damage may occur and
reliability may be affected.
Derating SOIC Packages: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
DC Supply Voltage 4.5 5.5 V
V
in
DC Input Voltage 0 5.5 V
V
out
DC Output Voltage V
CC
= 0
High or Low State
0
0
5.5
V
CC
V
T
A
Operating Temperature − 40 + 85
_C
t
r
, t
f
Input Rise and Fall Time V
CC
=5.0V ±0.5V 0 20 ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Test Conditions
V
CC
V
T
A
= 25°C T
A
= − 40 to 85°C
Uni
t
Min Typ Max Min Max
V
IH
Minimum High−Level
Input Voltage
4.5 to
5.5
2.0 2.0 V
V
IL
Maximum Low−Level
Input Voltage
4.5 to
5.5
0.8 0.8 V
V
OH
Minimum High−Leve
l
Output Voltage
V
in
= V
IH
or V
IL
I
OH
= − 50μA 4.5 4.4 4.5 4.4 V
I
OH
= − 8mA 4.5 3.94 3.80
V
OL
Maximum Low−Leve
l
Output Voltage
V
in
= V
IH
or V
IL
I
OL
= 50μA 4.5 0.0 0.1 0.1 V
I
OL
= 8mA 4.5 0.36 0.44
I
in
Maximum Input
Leakage Current
V
in
= 5.5 V or GND 0 to 5.5 ± 0.1 ± 1.0 μA
I
CC
Maximum Quiescent
Supply Current
V
in
= V
CC
or GND 5.5 2.0 20.0 μA
I
CCT
Quiescent Supply
Current
Per Input: V
IN
= 3.4V
Other Input: V
CC
or GND
5.5 1.35 1.50 mA
I
OPD
Output Leakage
Current
V
OUT
= 5.5V 0 0.5 5.0 μA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, V
in
and
V
out
should be constrained to the
range GND v (V
in
or V
out
) v V
CC
.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V
CC
).
Unused outputs must be left open.

MC74VHCT04ADTR2

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Inverters 5V CMOS Hex
Lifecycle:
New from this manufacturer.
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