PRTR5V0U2X_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 14 January 2008 4 of 11
NXP Semiconductors
PRTR5V0U2X
Ultra low capacitance double rail-to-rail ESD protection diode
6. Characteristics
[1] Measured from pin 2, 3 and 4 to ground.
[2] Measured from pin 4 to ground.
[3] Measured from pin 2 and 3 to ground.
[4] Measured from pin 2 to pin 3.
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
RWM
reverse standoff voltage - - 5.5 V
I
R
reverse current V
R
=3V
[1]
- < 1 100 nA
V
BR
breakdown voltage
[2]
6- 9V
C
(I/O-GND)
input/output to ground
capacitance
f = 1 MHz;
V
(I/O-GND)
=0V
[3]
- 1 1.5 pF
C
(I/O-I/O)
input/output to input/output
capacitance
f = 1 MHz;
V
(I/O-I/O)
=0V
[4]
- 0.6 - pF
C
sup
supply pin to ground
capacitance
f = 1 MHz;
V
CC
=0V
[2]
-16-pF
V
F
forward voltage - 0.7 - V
f = 1 MHz; T
amb
=25°C f = 1 MHz; T
amb
=25°C
Fig 2. Input/output to ground capacitance as a
function of input/output to ground voltage;
typical values
Fig 3. Input/output to input/output capacitance as a
function of input/output to input/output voltage;
typical values
V
(I/O-GND)
(V)
054231
006aaa483
0.8
1.2
0.4
1.6
2.0
C
(I/O-GND)
(pF)
0
V
(I/O-I/O)
(V)
054231
006aaa484
0.4
0.6
0.2
0.8
1.0
C
(I/O-I/O)
(pF)
0
