SI5905DC-T1-GE3 Datasheet SI5905DC-T1-GE3, SI5905DC-T1-E3 | P1-P3

Vishay Siliconix

Si5905DC

Document Number: 71066

S10-0936-Rev. C, 19-Apr-10

www.vishay.com

1

Dual P-Channel 1.8 V (G-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

®

Power MOSFETs: 1.8 V Rated

• Compliant to RoHS Directive 2002/95/EC

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)I

D

(A)

- 8

0.090 at V

GS

= - 4.5 V ± 4.1

0.130 at V

GS

= - 2.5 V ± 3.4

0.180 at V

GS

= - 1.8 V ± 2.9

Ordering Information: Si5905DC-T1-E3 (Lead (Pb)-free)

Si5905DC-T1-GE3 (Lead (Pb)-free and Halogen-free)

Bottom View

1206-8 ChipFET

S

1

G

1

S

2

G

2

D

1

D

1

D

2

D

2

1

Marking Code

DB XX

Lot Traceability

and Date Code

Part # Code

®

S

1

G

1

D

1

P-C P-Channel MOSFET

S

2

G

2

D

2

hannel MOSFET

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result

of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure

adequate bottom side solder interconnection.

c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage V

DS

- 8

V

Gate-Source Voltage V

GS

± 8

Continuous Drain Current (T

J

= 150 °C)

a

T

A

= 25 °C

I

D

± 4.1 ± 3.0

A

T

A

= 85 °C ± 2.9 ± 2.2

Pulsed Drain Current I

DM

± 10

Continuous Source Current (Diode Conduction)

a

I

S

- 1.8 - 0.9

Maximum Power Dissipation

a

T

A

= 25 °C

P

D

2.1 1.1

W

T

A

= 85 °C 1.1 0.6

Operating Junction and Storage Temperature Range T

J

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

b, c

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 5 s

R

thJA

50 60

°C/WSteady State 90 110

Maximum Junction-to-Foot (Drain) Steady State R

thJF

30 40

www.vishay.com

2

Document Number: 71066

S10-0936-Rev. C, 19-Apr-10

Vishay Siliconix

Si5905DC

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Gate Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= - 250 µA - 0.45 V

Gate-Body Leakage I

GSS

V

DS

= 0 V, V

GS

= ± 8 V ± 100 nA

Zero Gate Voltage Drain Current I

DSS

V

DS

= - 6.4 V, V

GS

= 0 V - 1

µA

V

DS

= - 6.4 V, V

GS

= 0 V, T

J

= 85 °C - 5

On-State Drain Current

a

I

D(on)

V

DS

≤ - 5 V, V

GS

= - 4.5 V - 10 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= - 4.5 V, I

D

= - 3 A 0.075 0.090

ΩV

GS

= - 2.5 V, I

D

= - 2.5 A 0.110 0.130

V

GS

= - 1.8 V, I

D

= - 1.0 A 0.150 0.180

Forward Transconductance

a

g

fs

V

DS

= - 5 V, I

D

= - 3 A 7 S

Diode Forward Voltage

a

V

SD

I

S

= - 0.9 A, V

GS

= 0 V - 0.8 - 1.2 V

Dynamic

b

Total Gate Charge Q

g

V

DS

= - 4 V, V

GS

= - 4.5 V, I

D

= - 3 A

5.5 9

nCGate-Source Charge Q

gs

0.5

Gate-Drain Charge Q

gd

1.5

Tur n - O n D e l ay T im e t

d(on)

V

DD

= - 4 V, R

L

= 4 Ω

I

D

≅ - 1 A, V

GEN

= - 4.5 V, R

g

= 6 Ω

10 15

ns

Rise Time t

r

45 70

Turn-Off Delay Time t

d(off)

30 45

Fall Time t

f

10 15

Source-Drain Reverse Recovery Time t

rr

I

F

= - 0.9 A, dI/dt = 100 A/µs 30 60

Output Characteristics

0

2

4

6

8

10

0.0 0.5 1.0 1.5 2.0 2.5 3.0

V

GS

=5V

t

h

r

u3V

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

1.5 V

2V

2.5 V

1V

Transfer Characteristics

0

2

4

6

8

10

0.0 0.5 1.0 1.5 2.0 2.5 3.0

T

C

=- 55 °C

125 °C

25 °C

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

Document Number: 71066

S10-0936-Rev. C, 19-Apr-10

www.vishay.com

3

Vishay Siliconix

Si5905DC

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage

- On-Resistance (Ω)R

DS(on)

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0246810

I

D

- Drain Current (A)

V

GS

=2.5V

V

GS

=4.5V

V

GS

=1.8V

0

1

2

3

4

5

0123456

V

DS

=4V

I

D

=3A

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

T

J

= 150 °C

10

1

V

SD

- Source-to-Drain Voltage (V)

- Source Current (A)I

S

T

J

=25 °C

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

V

DS

- Drain-to-Source Voltage (V)

C

oss

C

iss

C - Capacitance (pF)

0

200

400

600

800

1000

02468

C

rss

0.6

0.8

1.0

1.2

1.4

1.6

- 50 - 25 0 25 50 75 100 125 150

V

GS

=4.5V

I

D

=3A

T

J

- Junction Temperature (°C)

(Normalized)

- On-ResistanceR

DS(on)

0.00

0.05

0.10

0.15

0.20

0.25

012345

I

D

=3A

- On-Resistance (Ω)R

DS(on)

V

GS

- Gate-to-Source Voltage (V)

SI5905DC-T1-GE3

SI5905DC-T1-GE3

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