FMMT497TA

Issue 4 - November 2006 1 www.zetex.com

© Zetex Semiconductors plc 2006

FMMT497

SOT23 NPN silicon planar high voltage high

performance transistor

Complementary part number - FMMT597

Device marking - 497

Absolute maximum ratings

Parameter Symbol Value Unit

Collector-base voltage V

CBO

300 V

Collector-emitter voltage V

CEO

300 V

Emitter-base voltage V

EBO

5V

Continuous collector current I

C

500 mA

Peak pulse current I

CM

1A

Base current I

B

200 mA

Power dissipation at T

amb

=25°C P

tot

500 mW

Operating and storage temperature range T

j

:T

stg

-55 to +150 °C

C

E

B

C

E

B

Pinout - top view

FMMT497

Issue 4 - November 2006 2 www.zetex.com

© Zetex Semiconductors plc 2006

Electrical characteristics (at T

amb

= 25°C unless otherwise stated)

Parameter Symbol Min. Typ. Max

.

Unit Conditions

Collector-base

breakdown voltage

V

(BR)CBO

300 V I

C

= 100A

Collector-emitter

breakdown voltage

V

CEO(sus)

300 V

I

C

= 10mA

(*)

NOTES:

(*) Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%.

Emitter-base

breakdown voltage

V

(BR)EBO

5VI

E

= 100A

Collector cut-off current I

CBO

100 nA V

CB

= 250V

Collector cut-off current I

CES

100 nA V

CES

= 250V

Emitter cut-off current I

EBO

100 nA V

EB

= 4V

Collector-emitter

saturation voltage

V

CE(sat)

0.2

0.3

V

V

I

C

= 100mA, I

B

= 10mA

I

C

= 250mA, I

B

= 25mA

Base-emitter

saturation voltage

V

BE(sat)

1.0 V I

C

= 250mA, I

B

= 25mA

Base-emitter

turn on voltage

V

BE(on)

1.0 V I

C

= 250mA, V

CE

= 10V

Static forward current

transfer ratio

h

FE

100

80

20

300

I

C

= 1mA, V

CE

= 10V

I

C

= 100mA, V

CE

= 10V

(*)

I

C

= 250mA, V

CE

= 10V

(*)

Transition frequency f

T

75 MHz I

C

= 50mA, V

CE

= 10V

f = 100MHz

output capacitance C

obo

5pFV

CB

= 10V, f = 1MHz

Switching performance td 53 ns V

CC

= 100V, I

C

= 100mA,

Ib1 = -Ib2 = 10mA

tr 126 ns

ts 2.58 s

tf 228 ns

FMMT497

Issue 4 - November 2006 3 www.zetex.com

© Zetex Semiconductors plc 2006

Typical characteristics

V

CE(sat)

-(V)

1A10mA 100mA

1mA

-55 °C

+25 °C

+100 °C

I

C

/I

B

=10

V

CE(sat)

v I

C

I

C

-Collector Current

I

C

-Collector Current

V

BE(sat)

v I

C

V

BE(sat)

- (V)

0

0.2

100mA10mA

0.4

0.6

0.8

1A

h

FE

V I

C

I

C

-Collector Current

1mA

100mA10mA 1A

h

FE

- Typical Gain

100

0

300

200

400

10mA

1mA

I

C

-Collector Current

V

BE(on)

v I

C

100mA 1A

V

BE(on)

- (V)

0

I

C

-Collector Current

V

CE(sat)

v I

C

V

CE(sat)

-(V)

1mA

0

0.1

100mA10mA

+25 ° C

0.2

0.3

0.4

I

C

/I

B

=10

1A

+100 °C

-55 °C

+25 °C

+100 °C

-55 °C

+25 °C

-55 °C

+25 °C

+100 °C

I

C

/I

B

=10

V

CE

=10V

V

CE

=10V

I

C

-Collector Current (A)

1

0.1

Safe Operating Area

V

CE

- Collector Emitter Voltage (V)

0.1 10 100

1s

DC

100ms

10ms

100

µ

s

1ms

1

0

1mA

0.01

I

C

/I

B

=50

0.5

0.6

0.1

0.2

0.3

0.4

0.5

0.6

0.9

0.2

0.4

0.6

0.8

0.9

1000

0.001

FMMT497TA

Mfr. #:

Manufacturer:

Diodes Incorporated

Description:

Bipolar Transistors - BJT NPN High Voltage

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet

FMMT497TA