IXFC 12N80P
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Characteristic Values
(T
J
= 25° C unless otherwise specified)
Min. Typ. Max.
g
fs
V
DS
= 20 V; I
D
= I
T
, pulse test 12 18 S
C
iss
2800 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 210 pF
C
rss
19 pF
t
d(on)
21 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
22 ns
t
d(off)
R
G
= 10 Ω (External) 62 ns
t
f
22 ns
Q
g(on)
51 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
13 nC
Q
gd
19 nC
R
thJC
1.05 ° C/W
R
thCS
0.21 ° C/W
Source-Drain Diode Characteristic Values
(T
J
= 25° C unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
I
S
V
GS
= 0 V 12 A
I
SM
Repetitive 36 A
V
SD
I
F
= I
S
, V
GS
= 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
I
F
= 12 A, -di/dt = 100 A/µs 250 ns
I
RM
V
R
= 100 V, V
GS
= 0 V 7 A
Q
RM
0.7 µC
ISOPLUS220
TM
(IXFC) Outline
Ref: IXYS CO 0177 R0
Note:
Bottom heatsink (Pin 4) is
electrically isolated from Pin
1,2, or 3.
Note 1: Test Current I
T
= 6 A
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and
experience, and constitute a "considered reflection" of the anticipated objective result. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
