LPC2364_65_66_67_68 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 7.1 — 16 October 2013 43 of 69
NXP Semiconductors
LPC2364/65/66/67/68
Single-chip 16-bit/32-bit microcontrollers
[1] Typical ratings are not guaranteed. The values listed are at room temperature (25 C), nominal supply voltages.
[2] The RTC typically fails when V
i(VBAT)
drops below 1.6 V.
[3] V
DD(DCDC)(3V3)
= 3.3 V; V
DD(3V3)
= 3.3 V; V
i(VBAT)
= 3.3 V; T
amb
=25C.
[4] On pin VBAT.
[5] Including voltage on outputs in 3-state mode.
[6] V
DD(3V3)
supply voltages must be present.
[7] 3-state outputs go into 3-state mode when V
DD(3V3)
is grounded.
[8] Please also see the errata note in errata sheet.
[9] Accounts for 100 mV voltage drop in all supply lines.
[10] Allowed as long as the current limit does not exceed the maximum current allowed by the device.
[11] Minimum condition for V
I
= 4.5 V, maximum condition for V
I
=5.5V.
[12] LPC2364HBD only.
[13] To V
SS
.
[14] Includes external resistors of 33 1 % on D+ and D.
USB pins (LPC2364/66/68 only)
I
OZ
OFF-state output
current
0V<V
I
<3.3V - - 10 A
V
BUS
bus supply voltage - - 5.25 V
V
DI
differential input
sensitivity voltage
(D+) (D) 0.2 - - V
V
CM
differential common
mode voltage range
includes V
DI
range 0.8 - 2.5 V
V
th(rs)se
single-ended receiver
switching threshold
voltage
0.8 - 2.0 V
V
OL
LOW-level output
voltage for
low-/full-speed
R
L
of 1.5 k to 3.6 V - - 0.18 V
V
OH
HIGH-level output
voltage (driven) for
low-/full-speed
R
L
of 15 k to GND 2.8 - 3.5 V
C
trans
transceiver capacitance pin to GND - - 20 pF
Z
DRV
driver output
impedance for driver
which is not high-speed
capable
with 33 series resistor;
steady state drive
[14]
36 - 44.1
Table 8. Static characteristics …continued
T
amb
=
40
C to +85
C for standard devices,
40
C to +125
C for LPC2364HBD only, unless otherwise specified.
Symbol Parameter Conditions Min Typ
[1]
Max Unit
LPC2364_65_66_67_68 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 7.1 — 16 October 2013 44 of 69
NXP Semiconductors
LPC2364/65/66/67/68
Single-chip 16-bit/32-bit microcontrollers
10.1 Power-down mode
V
i(VBAT)
= V
DD(DCDC)(3V3)
= 3.3 V; T
amb
=25C.
Fig 5. I/O maximum supply current I
DD(IO)
versus temperature in Power-down mode
V
DD(3V3)
= V
DD(DCDC)(3V3)
= 3.3 V; T
amb
=25C.
Fig 6. RTC battery maximum supply current I
BAT
versus temperature in Power-down
mode
002aae049
2
2
0
4
I
DD(IO)
(μA)
4
temperature (°C)
40 853510 6015
V
DD(3V3)
= 3.3 V
V
DD(3V3)
= 3.0 V
002aae050
V
i(VBAT)
= 3.3 V
V
i(VBAT)
= 3.0 V
10
30
20
40
I
BAT
(μA)
0
temperature (°C)
40 853510 6015
LPC2364_65_66_67_68 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 7.1 — 16 October 2013 45 of 69
NXP Semiconductors
LPC2364/65/66/67/68
Single-chip 16-bit/32-bit microcontrollers
10.2 Deep power-down mode
V
DD(3V3)
= V
i(VBAT)
= 3.3 V; T
amb
=25C.
Fig 7. Total DC-to-DC converter supply current I
DD(DCDC)pd(3V3)
at different temperatures
in Power-down mode
002aae051
200
600
400
800
0
temperature (°C)
40 853510 6015
V
DD(DCDC)(3V3)
= 3.3 V
V
DD(DCDC)(3V3)
= 3.0 V
I
DD(DCDC)pd(3v3)
(μA)
V
DD(3V3)
= V
DD(DCDC)(3V3)
= 3.3 V; T
amb
=25C.
Fig 8. I/O maximum supply current I
DD(IO)
versus temperature in Deep power-down
mode
temperature (°C)
40 853510 6015
002aae046
100
200
300
I
DD(IO)
(μA)
0
V
DD(3V3)
= 3.3 V
V
DD(3V3)
= 3.0 V

LPC2364FBD100,551

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
ARM Microcontrollers - MCU ARM7 128KF/USB/ENET
Lifecycle:
New from this manufacturer.
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