IO = 500 mA
VR = 40 Volts
CDBF0540
SMD Schottky Barrier Diode
SMD Diodes Specialist
+125
O
C
TSTG
Symbol
Typ
Parameter
Conditions Min
Max
Unit
Forward voltage
VF V
Reverse current
mA
0.01
O
Maximum Rating (at TA=25 C unless otherwise noted)
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Typ
IO
VR
VRM
Average forward rectified current
Reverse voltage
Peak reverse voltage
Forward current,surge peak
Symbol
Parameter
Conditions
Min
Max
Unit
V
V
mA
500
40
40
Tj
Storage temperature
Junction temperature
O
C
+125
-40
IFSM
8.3 ms single half sine-wave superimposed
on rate load (JEDEC method)
5.5
A
O
IF = 0.5 A @Ta = 25 C
O
IF = 1 A @Ta = 100 C
O
IF = 1 A @Ta = 25 C
O
IF = 0.5 A @Ta = 100 C
0.51
0.62
0.64
0.46
0.02
IR
2
O
VR = 40V @Ta = 25 C
O
VR = 20V @Ta = 25 C
O
VR = 40V @Ta = 100 C
O
VR = 20V @Ta = 100 C
5
Capacitance between terminals
f = 1 MHz, and 0 VDC reverse voltage
CT
pF
170
Reverse recovery time
IF = IR = 10mA, Irr x IR, RL = 100ohm
Trr
ns
22
Page 1
QW-A1040
REV:B
Features
Low forward voltage.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
Mechanical data
Case: 1005(2512) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Marking code: cathode band & BN
Mounting position: Any
Weight: 0.006 gram(approx.).
(RoHS Device)
0.102(2.60)
0.095(2.40)
0.020(0.50) Typ.
0.051(1.30)
0.043(1.10)
0.035(0.90)
0.027(0.70)
Dimensions in inches and (millimeter)
1005(2512)
0.012 (0.30) Typ.
0.040(1.00) Typ.
Comchip Technology CO., LTD.
