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TCDT1120

P1-P3P4-P6P7-P9P10-P10
Document Number: 83532 For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
Rev. 1.7, 28-Oct-09 789
Optocoupler, Phototransistor Output
TCDT1120, TCDT1120G
Vishay Semiconductors
DESCRIPTION
The TCDT1120(G) series consists of a phototransistor
optically coupled to a gallium arsenide infrared emitting
diode in a 6 lead plastic dual in line package.
FEATURES
• High common mode rejection
• Four CTR groups available
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• Switch-mode power supplies
• Line receiver
• Computer peripheral interface
• Microprocessor system interface
• Reinforced isolation provides circuit protection against
electrical shock (safety class II)
• Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
- for appl. class I - IV at mains voltage ≤ 300 V
- for appl. class I - III at mains voltage ≤ 600 V
according to DIN EN 60747-5-5
AGENCY APPROVALS
• UL1577, file no. E52744, double protection
• BSI IEC 60950 IEC 60065
• DIN EN 60747-5-5 (VDE 0884)
•FIMKO
• cUL tested to CSA 22.2 bulletin 5A
Note
(1)
G = leadform 10.16 mm; G is not marked on the body.
17201_6
65
4
2
3
1
NC
C
E
A( +) C (–) NC
V
DE
17201_4
ORDER INFORMATION
(1)
PART REMARKS
TCDT1120 CTR > 40 %, DIP-6
TCDT1122 CTR 63 % to 125 %, DIP-6
TCDT1123 CTR 100 % to 200 %, DIP-6
TCDT1124 CTR 160 % to 320 %, DIP-6
TCDT1120G CTR > 40 %, DIP-6
TCDT1122G CTR 63 % to 125 %, DIP-6
TCDT1123G CTR 100 % to 200 %, DIP-6
TCDT1124G CTR 160 % to 320 %, DIP-6
www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83532
790 Rev. 1.7, 28-Oct-09
TCDT1120, TCDT1120G
Vishay Semiconductors
Optocoupler, Phototransistor Output
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to wave profile for soldering conditions for through hole devices (DIP).
Note
(1)
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
5V
Forward current I
F
60 mA
Forward surge current t
p
≤ 10 μs I
FSM
3A
Power dissipation P
diss
100 mW
Junction temperature T
j
125 °C
OUTPUT
Collector emitter voltage V
CEO
70 V
Emitter collector voltage V
ECO
7V
Collector current I
C
50 mA
Collector peak current t
p
/T = 0.5, t
p
≤ 10 ms I
CM
100 mA
Power dissipation P
diss
150 mW
Junction temperature T
j
125 °C
COUPLER
Isolation test voltage (RMS) t = 1 s V
ISO
5000 V
RMS
Total power dissipation P
tot
250 mW
Ambient temperature range T
amb
- 55 to + 100 °C
Storage temperature range T
stg
- 55 to + 125 °C
Soldering temperature
(2)
2 mm from case, t ≤ 10 s T
sld
260 °C
ELECTRICAL CHARACTERISTCS
(1)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 50 mA V
F
1.25 1.6 V
Junction capacitance V
R
= 0 V, f = 1 MHz C
j
50 pF
OUTPUT
Collector base voltage I
C
= 100 μAV
CBO
90 V
Collector emitter voltage I
C
= 1 mA V
CEO
90 V
Emitter collector voltage I
E
= 100 μA V
ECO
7V
Collector ermitter cut-off current V
CE
= 20 V, I
F
= 0 A I
CEO
150 nA
COUPLER
Collector emitter saturation voltage I
F
= 10 mA, I
C
= 1 mA V
CEsat
0.3 V
Cut-off frequency V
CE
= 5 V, I
F
= 10 mA, R
L
= 100 Ω f
c
110 kHz
Coupling capacitance f = 1 MHz C
k
0.3 pF
Document Number: 83532 For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
Rev. 1.7, 28-Oct-09 791
TCDT1120, TCDT1120G
Optocoupler, Phototransistor Output
Vishay Semiconductors
Note
(1)
According to DIN EN 60747-5-5 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
I
C
/I
F
V
CE
= 5 V, I
F
= 1 mA
TCDT1120
CTR 10 %
TCDT1120G
TCDT1122
CTR 15 %
TCDT1122G
TCDT1123
CTR 30 %
TCDT1123G
TCDT1124
CTR 60 %
TCDT1124G
V
CE
= 5 V, I
F
= 10 mA
TCDT1120
CTR 40 %
TCDT1120G
TCDT1122
CTR 63 125 %
TCDT1122G
TCDT1123
CTR 100 200 %
TCDT1123G
TCDT1124
CTR 160 320 %
TCDT1124G
MAXIMUM SAFETY RATINGS
(1)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward current I
F
130 mA
OUTPUT
Power dissipation P
diss
265 mW
COUPLER
Rated impulse voltage V
IOTM
6kV
Safety temperature T
si
150 °C
INSULATION RATED PARAMETERS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Partial discharge test voltage -
routine test
100 %, t
test
= 1 s V
pd
1.6 kV
Partial discharge test voltage -
lot test (sample test)
t
Tr
= 60 s, t
test
= 10 s,
(see figure 2)
V
IOTM
6kV
V
pd
1.3 kV
Insulation resistance
V
IO
= 500 V R
IO
10
12
Ω
V
IO
= 500 V, T
amb
≤ 100 °C R
IO
10
11
Ω
V
IO
= 500 V, T
amb
≤ 150 °C
(construction test only)
R
IO
10
9
Ω
P1-P3P4-P6P7-P9P10-P10

TCDT1120

Mfr. #:
Buy TCDT1120
Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers Phototransistor Out
Lifecycle:
New from this manufacturer.
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