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Document Number: 83532
794 Rev. 1.7, 28-Oct-09
TCDT1120, TCDT1120G
Vishay Semiconductors
Optocoupler, Phototransistor Output
Fig. 5 - Test Circuit, Saturated Operation
Fig. 6 - Total Power Dissipation vs. Ambient Temperature
Fig. 7 - Forward Current vs. Forward Voltage
Fig. 8 - Relative Current Transfer Ratio vs. Ambient Temperature
Fig. 9 - Collector Dark Current vs. Ambient Temperature
Fig. 10 - Collector Current vs. Forward Current
Channel I
Channel II
95 10843
R
G
= 50 Ω
t
p
t
p
= 50 µs
T
= 0.01
+ 5 V
I
C
I
F
0
50 Ω
1 kΩ
I
F
= 10 mA
Oscilloscope
R
L
≥
C
L
20 pF
1 MΩ
≤
0
50
100
150
200
250
300
0 40 80 120
P
tot
- Total Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
96 11700
Coupled device
Phototransistor
IR-diode
0.1
1
10
100
1000
0
V
F
- Forward Voltage (V)
96 11862
I
F
- Forward Current (mA)
1.6
1.2
0.8
0.4
2.0
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
- 30 - 20 - 10 0 10 20 30 40 50 60 70 80
T
amb
- Ambient Temperature (°C)
96 11918
CTR - Relative Current Transfer Ratio
rel
V
CE
= 5 V
I
F
= 10 mA
0255075
1
10
100
1000
10 000
I - Collector Dark Current,
CEO
T
amb
- Ambient Temperature (°C)
100
95 11038
with Open Base (nA)
V
CE
= 30 V
I
F
= 0
0.1 1 10
0.01
0.1
1
100
I - Collector Current (mA)
C
I
F
- Forward Current (mA)
100
95 11040
10
V
CE
= 5 V
