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BU426A-S

P1-P3P4-P5
BU426, BU426A
NPN SILICON POWER TRANSISTORS
4
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 3. Figure 4.
Figure 5. Figure 6.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
0·1 1·0 10
h
FE
- Typical DC Current Gain
1·0
10
100
TCP741AF
V
CE
= 1.5 V
V
CE
= 5 V
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
I
B
- Base Current - A
0 0·5 1·0 1·5 2·0
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
0
1
2
3
4
5
6
7
TCP741AG
I
C
= 4 A
I
C
= 3 A
I
C
= 2 A
I
C
= 1 A
T
C
= 25°C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
I
B
- Base Current - A
0 0·5 1·0 1·5 2·0
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
0
1
2
3
4
5
6
7
TCP741AH
I
C
= 4 A
I
C
= 3 A
I
C
= 2 A
I
C
= 1 A
T
C
= 100°C
BASE-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
I
B
- Base Current - A
0 0·2 0·4 0·6 0·8 1·0 1·2 1·4 1·6
V
BE(sat)
- Base-Emitter Saturation Voltage - V
0·6
0·7
0·8
0·9
1·0
1·1
1·2
TCP741AI
T
C
= 25°C
I
C
= 4 A
I
C
= 3 A
I
C
= 2 A
I
C
= 1 A
OBSOLETE
BU426, BU426A
NPN SILICON POWER TRANSISTORS
5
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
MAXIMUM SAFE OPERATING REGIONS
Figure 7.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
V
CE
- Collector-Emitter Voltage - V
1·0 10 100 1000
I
C
- Collector Current - A
0·01
0.1
1·0
10
100
SAP741AA
BU426
BU426A
t
p
= 0.2 µs
t
p
= 0.5 µs
t
p
= 1 µs
t
p
= 2 µs
t
p
= 6 µs
t
p
= 20 µs
DC Operation
OBSOLETE
P1-P3P4-P5

BU426A-S

Mfr. #:
Buy BU426A-S
Manufacturer:
Bourns
Description:
Bipolar Transistors - BJT 900V 6A NPN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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