EE-SG3-B

106 EE-SG3/EE-SG3-B Photomicrosensor (Transmissive)
Photomicrosensor (Transmissive)
EE-SG3/EE-SG3-B
Dimensions
Note: All units are in millimeters unless otherwise indicated.
Features
Dust-proof model.
Solder terminal model (EE-SG3).
PCB terminal model (EE-SG3-B).
Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max.
±0.3
3 < mm 6
±0.375
6 < mm 10
±0.45
10 < mm 18
±0.55
18 < mm 30
±0.65
Unless otherwise specified, the
tolerances are as shown below.
Four, 1.5
Four, 0.
5
Optical axis
Cross section AA
Cross section AA
Four, 0.25
19±0.1
25.4±0.2
3.6±0.2
7.62±0.3
2.54±0.3
2.54
0.8
0.6
1.2
13
Two, 3.2±0.2
dia. holes
Item Symbol Rated value
Emitter Forward current I
F
50 mA
(see note 1)
Pulse forward cur-
rent
I
FP
1 A
(see note 2)
Reverse voltage V
R
4 V
Detector Collector–Emitter
voltage
V
CEO
30 V
Emitter–Collector
voltage
V
ECO
---
Collector current I
C
20 mA
Collector dissipa-
tion
P
C
100 mW
(see note 1)
Ambient tem-
perature
Operating Topr –25°C to 85°C
Storage Tstg –30°C to 100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage V
F
1.2 V typ., 1.5 V max. I
F
= 30 mA
Reverse current I
R
0.01 μA typ., 10 μA max. V
R
= 4 V
Peak emission wavelength λ
P
940 nm typ. I
F
= 20 mA
Detector Light current I
L
2 mA min., 40 mA max. I
F
= 15 mA, V
CE
= 10 V
Dark current I
D
2 nA typ., 200 nA max. V
CE
= 10 V, 0 lx
Leakage current I
LEAK
--- ---
Collector–Emitter saturated volt-
age
V
CE
(sat) 0.1 V typ., 0.4 V max. I
F
= 30 mA, I
L
= 1 mA
Peak spectral sensitivity wave-
length
λ
P
850 nm typ. V
CE
= 10 V
Rising time tr 4 μs typ. V
CC
= 5 V, R
L
= 100 Ω, I
L
= 5 mA
Falling time tf 4 μs typ. V
CC
= 5 V, R
L
= 100 Ω, I
L
= 5 mA
Be sure to read Precautions on page 25.
EE-SG3/EE-SG3-B Photomicrosensor (Transmissive) 107
Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
Forward Current vs. Forward
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. CollectorEmitter
Voltage Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
(Center of
optical axis)
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation P
C
(mW)
Forward voltage V
F
(V)
Forward current I
F
(mA)
Forward current I
F
(mA)
Forward current I
F
(mA)
Light current I
L
(mA)
CollectorEmitter voltage V
CE
(V)
Light current I
L
(mA)
Ambient temperature Ta (°C)
Load resistance R
L
(kΩ)
Ta = 30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
V
CE
= 10 V
I
F
= 20 mA
I
F
= 15 mA
I
F
= 10 mA
I
F
= 5 mA
Ta = 25°C
V
CE
= 10 V
0 lx
I
F
= 20 mA
V
CE
= 5 V
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
V
CC
= 5 V
Ta = 25°C
Response time tr, tf (μs)
Relative light current I
L
(%)
Dark current I
D
(nA)
Relative light current I
L
(%)
I
F
= 25 mA
Ambient temperature Ta (°C)
I
F
P
C
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current I
L
(%)
100
80
60
40
20
0
1.52.0 1.0 0.5 0 0.5 1.0 1.5 2.0
120
d
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°C
(Center of optical axis)

EE-SG3-B

Mfr. #:
Manufacturer:
Omron Electronics
Description:
Optical Switches, Transmissive, Phototransistor Output TRANS PCB TERM.
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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