AOD407

AOD407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0
2
4
6
8
10
0 4 8 12 16
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(Volts)
0
200
400
600
800
1000
1200
0 5 10 15 20 25 30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
0
40
80
120
160
200
0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
θ
JC
Normalized Transient
Thermal Resistance
C
oss
C
r
ss
0.1
1.0
10.0
100.0
0.1 1 10 100
-V
DS
(Volts)
-I
D
(Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100µs
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=175°C, T
A
=25°C
V
DS
=-30V
I
D
=-12A
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=3°C/W
T
n
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=175°C
T
C
=25°C
10
µ
s
Alpha & Omega Semiconductor, Ltd.
AOD407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Z
θ
JA
Normalized Transient
Thermal Resistance
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=50°C/W
T
n
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
6
8
10
12
14
0.00001 0.0001 0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
-I
D
(A), Peak Avalanche Current
0
10
20
30
40
50
60
0 25 50 75 100 125 150 175
T
CASE
(°C)
Figure 13: Power De-rating (Note B)
Power Dissipation (W)
0
2
4
6
8
10
12
14
0 25 50 75 100 125 150 175
T
CASE
(°C)
Figure 14: Current De-rating (Note B)
Current rating -I
D
(A)
DD
D
A
VBV
IL
t
=
T
A
=25°C
0
10
20
30
40
50
60
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Power (W)
T
A
=25°C
Alpha & Omega Semiconductor, Ltd.
AOD407
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs
Qg
Qgs
Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
Vdd
Vgs
Id
Vgs
Rg
DUT
VDC
Vgs
Vds
Id
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
L
-
+
2
E = 1/2 LI
AR
AR
BV
DSS
I
AR
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
dI/dt
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
-Isd
-Vds
F
-I
-I
VDC
DUT
Vdd
Vgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
tt
t
t
t
t
90%
10%
r
on
d(off)
f
off
d(on)
Alpha & Omega Semiconductor, Ltd.

AOD407

Mfr. #:
Manufacturer:
Description:
MOSFET P-CH 60V 12A TO252
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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