PL602-03SC

PL602-03
Low Phase Noise CMOS XO (48MHz to 100MHz)
Micrel Inc. 2 180 Fortune Drive San J ose, CA 9513 1 USA tel +1 (408) 944 -0800 fax +1(408) 47 4-1000 www.micrel.com Rev 11/16/11 Page 1
FEATURES
Low phase noise XO output for the 48MHz to
100MHz range (-130 dBc at 10kHz offset).
12 to 25MHz crystal input.
Integrated crystal load capacitor: no external
load capacitor required.
Selectable High Drive (30mA) or Sta ndard Drive
(10mA) output.
3.3V operation.
Available in 8-Pin TSSOP or SOIC.
DESCRIPTION
The PL602-03 is a low cost, high performance and
low phase noise XO, providing less than -130dBc at
10kHz offset in the 48MHz to 100MHz operating
range. The very low jitter makes this chip ideal for
applications requiring clean reference frequency
sources. Input crystal can range from 12 to 25MHz
(fundamental resonant mode).
PIN CONFIGURATION
OUTPUT RANGE
MULTIPLIER
FREQUENCY
RANGE
OUTPUT
BUFFER
X4
48 - 100MHz
CMOS
BLOCK DIAGRAM
Reference
Divider
Phase
Comparator
Charge
Pump
Loop
Filter
VCO
VCO
Divider
XTAL
OSC
OE
XIN
XOUT
CLK
PL602-03
1
2
3
4 5
6
7
8
CLK
VDD
OE^
XIN
GND
N/C
XOUT
GND
Note: ^ denotes internal pull up
PL602-03
Low Phase Noise CMOS XO (48MHz to 100MHz)
Micrel Inc. 2180 Fort une Drive San Jose, CA 95131 USA t el +1(408) 944-0800 fax +1(408) 474- 1000 www.micrel.com Rev 11/16/11 Pa ge 2
PIN DESCRIPTIONS
Name
Number
Description
CLK
1
Output clock.
VDD
2
power supply.
OE
3
Output enable input. Disables (tri-state) output when low. Internal pull-up
enables output by default if pin is not connected to low.
XIN
4
Crystal input. See Crystal Specification on page 3.
XOUT
5
Crystal output. See Crystal Specification on page 3.
N/C
6
Not connected.
GND
7, 8
Ground.
ELECTRICAL SPECIFICATIONS
1. Absolute Maximum Ratings
PARAMETERS
SYMBOL
MIN.
MAX.
UNITS
Supply Voltage
V
DD
4.6
V
Input Voltage, dc
V
I
-0.5
V
DD
+0.5
V
Output Voltage, dc
V
O
-0.5
V
DD
+0.5
V
Storage Temperature
T
S
-65
150
C
Ambient Operating Temperature*
T
A
-40
85
C
Lead Temperature (soldering, 10s)
260
C
ESD Protection, Human Body Model
2
kV
Exposure of the device under conditions beyond the limits specifie d by Maximum Rat ings for e xtended pe riods may c ause permanent dam age to the
device and af fect product reliability. These co nditions represent a stress r ating only, and functional operations of the dev ice at these or any other co n-
ditions above t he operational limits noted in this specification is not i mplied.
* Not e: O perating Tempe rature is guaranteed by design for all parts (COMMERCIAL and INDU STRIAL), but tested for COMMERCIAL grade only.
2. DC Specifications
PARAMETERS
SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
UNITS
Supply Current, Dynamic, with
Loaded Outputs
I
DD
F
XIN
= 12 - 25MHz
Output load of 10pF
35
mA
Operating Voltage
V
DD
2.97
3.63
V
Output drive current
(High Drive)
I
OH
V
OH
= V
DD
-0.4V, V
DD
=3.3V
30
mA
I
OL
V
OL
= 0.4V, V
DD
= 3.3V
30
mA
Output drive current
(Standard Drive)
I
OH
V
OH
= V
DD
-0.4V, V
DD
=3.3V
10
mA
I
OL
V
OL
= 0.4V, V
DD
= 3.3V
10
mA
PL602-03
Low Phase Noise CMOS XO (48MHz to 100MHz)
Micrel Inc. 2180 Fort une Drive San Jose, CA 95131 USA t el +1(408) 944-0800 fax +1(408) 474- 1000 www.micrel.com Rev 11/16/11 Pa ge 3
3. AC Specifications
PARAMETERS
SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
UNITS
Input Crystal Frequency
12
25
MHz
Output Clock Rise/Fall Time
(Standard Drive)
0.3V ~ 3.0V with 15 pF load
2.4
ns
Output Clock Rise/Fall Time
(High Drive)
0.3V ~ 3.0V with 15 pF load
1.2
Output Clock Duty Cycle
Measured @ 50% V
DD
45
50
55
%
4. Jitter and Phase Noise Specification
PARAMETERS
CONDITIONS
MIN.
TYP.
MAX.
UNITS
RMS Period Jitter
(1 sigma 1000 samples)
at 80MHz, with capacitive decoupling
between VDD and GND.
20
ps
Phase Noise relative to carrier
80MHz @100Hz offset
-106
dBc/Hz
Phase Noise relative to carrier
80MHz @1kHz offset
-124
dBc/Hz
Phase Noise relative to carrier
80MHz @10kHz offset
-130
dBc/Hz
Phase Noise relative to carrier
80MHz @100kHz offset
-122
dBc/Hz
Phase Noise relative to carrier
80MHz @1MHz offset
-121
dBc/Hz
5. Crystal Specifications
PARAMETERS
SYMBOL
MIN.
TYP.
MAX.
UNITS
Crystal Resonator Frequency
F
XIN
12
25
MHz
Crystal Loading Capacitance Rating
C
L
(xtal)
20
pF
Driving power
1
mW
ESR
R
S
30
PACKAGE INFORMATION
C
L
A
8 PIN ( dimensions in mm )
Narrow SOIC
Symbol Min.
Max
.
A 1.34 1.74
A1
0.10 0.25
B 0.33 0.51
C 0.19 0.25
D 4.80 4.95
E 3.80 4.00
H 5.80 6.20
L 0.38 1.27
e
1.27 BSC
E
H
D
A1
e
B
TSSOP
Min.
Max
.
- 1.20
0.05 0.15
0.19 0.30
0.09 0.20
2.90 3.10
4.30 4.50
6.20 6.60
0.45 0.75
0.65 BSC

PL602-03SC

Mfr. #:
Manufacturer:
Microchip Technology / Micrel
Description:
Clock Generators & Support Products Low Phase Noise CMOS XO (48MHz to 100MHz)
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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