2009-12-01Rev. 2.5
Page 3
SPP24N60C3
Electrical Characteristics , at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol Conditions Values Unit
min. typ. max.
Transconductance g
fs
V
DS
≥2*I
D
*R
DS(on)max
,
I
D
=15.4A
- 21.5 - S
Input capacitance C
iss
V
GS
=0V, V
DS
=25V,
f=1MHz
- 3000 - pF
Output capacitance C
oss
- 1000 -
Reverse transfer capacitance C
rss
- 60 -
Effective output capacitance,
2)
energy related
C
o(er)
V
GS
=0V,
V
DS
=0V to 480V
- 141 - pF
Effective output capacitance,
3)
time related
C
o(tr)
- 224 -
Turn-on delay time t
d(on)
V
DD
=380V, V
GS
=0/10V,
I
D
=24.3A, R
G
=3.3Ω
- 13 - ns
Rise time t
r
- 21 -
Turn-off delay time t
d(off)
- 140 -
Fall time t
f
- 14 -
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=480, I
D
=24.3A - 12.7 - nC
Gate to drain charge Q
gd
- 45.8 -
Gate charge total Q
g
V
DD
=480V, I
D
=24.3A,
V
GS
=0 to 10V
- 104.9 135
Gate plateau voltage V
(plateau)
V
DD
=480V, I
D
=24.3A - 5 - V
1
Repetitve avalanche causes additional power losses that can be calculated as P
AV
=E
AR
*f.
2
C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
3
C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
4
ISD<=ID, di/dt<=200A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.
