MC74VHC50D

© Semiconductor Components Industries, LLC, 2011
May, 2011 Rev. 5
1 Publication Order Number:
MC74VHC50/D
MC74VHC50
Hex Buffer
The MC74VHC50 is an advanced high speed CMOS buffer
fabricated with silicon gate CMOS technology.
The internal circuit is composed of three stages, including a buffered
output which provides high noise immunity and stable output. The
inputs tolerate voltages up to 7 V, allowing the interface of 5 V systems
to 3 V systems.
High Speed: t
PD
= 3.8 ns (Typ) at V
CC
= 5 V
Low Power Dissipation: I
CC
= 2 mA (Max) at T
A
= 25°C
High Noise Immunity: V
NIH
= V
NIL
= 28% V
CC
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Designed for 2 V to 5.5 V Operating Range
Low Noise: V
OLP
= 0.8 V (Max)
These Devices are PbFree and are RoHS Compliant
Figure 1. Logic Diagram
Y1A1
A2
A3
A4
A5
A6
Y2
Y3
Y4
Y5
Y6
1
3
5
9
11
13
2
4
6
8
10
12
Y = A
A1
Y1
1
A2
Y2
1
A3
Y3
1
A4
Y4
1
A5
Y5
1
A6
Y6
1
Figure 2. Logic Symbol
14LEAD SOIC
D SUFFIX
CASE 751A
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14LEAD TSSOP
DT SUFFIX
CASE 948G
PIN CONNECTION AND
MARKING DIAGRAM (Top View)
Device Package Shipping
ORDERING INFORMATION
MC74VHC50DG SOIC 55 Units/Rail
1314 12 11 10 9 8
21 34567
V
CC
A6 Y6 A5 Y5 A4 Y4
A1 Y1 A2 Y2 A3 Y3 GND
14LEAD SOIC EIAJ
M SUFFIX
CASE 965
MC74VHC50MG SOIC EIAJ 50 Units/Rail
FUNCTION TABLE
L
H
A Input Y Output
L
H
For detailed package marking information, see the Marking
Diagram section on page 4 of this data sheet.
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MC74VHC50DR2G SOIC 2500 Units/T&R
MC74VHC50DTR2G TSSOP 2500 Units/T&R
MC74VHC50
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2
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage *0.5 to )7.0 V
V
IN
DC Input Voltage *0.5 to )7.0 V
V
OUT
DC Output Voltage *0.5 to V
CC
)0.5 V
I
IK
DC Input Diode Current V
I
< GND *20 mA
I
OK
DC Output Diode Current V
O
< GND $20 mA
I
OUT
DC Output Sink Current $25 mA
I
CC
DC Supply Current per Supply Pin $50 mA
T
STG
Storage Temperature Range *65 to )150 °C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
T
J
Junction Temperature under Bias )150 °C
q
JA
Thermal Resistance (Note 1)
SOIC
TSSOP
125
170
°C/W
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating Oxygen Index: 30 to 35 UL 94 V0 @ 0.125 in
V
ESD
ESD Withstand Voltage Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
> 2000
> 200
2000
V
I
LatchUp
LatchUp Performance Above V
CC
and Below GND at 85°C (Note 5) $300 mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2ounce copper trace with no air flow.
2. Tested to EIA/JESD22A114A.
3. Tested to EIA/JESD22A115A.
4. Tested to JESD22C101A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
Supply Voltage 2.0 5.5 V
V
I
Input Voltage (Note 6) 0 5.5 V
V
O
Output Voltage (HIGH or LOW State) 0 V
CC
V
T
A
Operating FreeAir Temperature *55 )125 °C
Dt/DV
Input Transition Rise or Fall Rate V
CC
= 3.0 V $0.3 V
V
CC
= 5.0 V $0.5 V
0
0
100
20
ns/V
6. Unused inputs may not be left open. All inputs must be tied to a high or lowlogic input voltage level.
NOTE: The q
JA
of the package is equal to 1/Derating. Higher junction temperatures may affect the expected lifetime of the device per the table
and figure below.
MC74VHC50
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3
DC ELECTRICAL CHARACTERISTICS
V
CC
T
A
= 25°C T
A
85°C T
A
125°C
Symbol Parameter Test Conditions (V) Min Typ Max Min Max Min Max Unit
V
IH
Minimum HighLevel
Input Voltage
2.0
3.0
4.5
5.5
1.5
2.0
3.15
3.85
1.5
2.0
3.15
3.85
1.5
2.0
3.15
3.85
V
V
IL
Maximum LowLevel
Input Voltage
2.0
3.0
4.5
5.5
0.5
0.9
1.35
1.65
0.5
0.9
1.35
1.65
0.5
0.9
1.35
1.65
V
V
OH
Minimum HighLevel
Output Voltage
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
I
OH
= 50 mA
2.0
3.0
4.5
1.9
2.9
4.4
2.0
3.0
4.5
1.9
2.9
4.4
1.9
2.9
4.4
V
V
IN
= V
IH
or V
IL
I
OH
= 4 mA
I
OH
= 8 mA
3.0
4.5
2.58
3.94
2.48
3.80
2.34
3.66
V
V
OL
Maximum LowLevel
Output Voltage
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
I
OL
= 50 mA
2.0
3.0
4.5
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
IN
= V
IH
or V
IL
I
OL
= 4 mA
I
OL
= 8 mA
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
V
I
IN
Maximum Input
Leakage Current
V
IN
= 5.5 V or GND 0 to
5.5
±0.1 ±1.0 ±1.0
mA
I
CC
Maximum Quiescent
Supply Current
V
IN
= V
CC
or GND 5.5 2.0 20 40
mA
AC ELECTRICAL CHARACTERISTICS (C
load
= 50 pF, Input t
r
= t
f
= 3.0 ns)
Symbol Parameter Test Conditions
T
A
= 25°C T
A
85°C T
A
125°C
Unit
Min Typ Max Min Max Min Max
t
PLH
,
t
PHL
Maximum
Propogation Delay,
Input A to Y
V
CC
= 3.0 ± 0.3 V C
L
= 15 pF
C
L
= 50 pF
5.0
7.5
7.1
10.6
8.5
12.0
10.0
14.5
ns
V
CC
= 5.0 ± 0.5 V C
L
= 15 pF
C
L
= 50 pF
3.8
5.3
5.5
7.5
6.5
8.5
8.0
10.0
C
IN
Maximum Input
Capacitance
4 10 10 10 pF
C
PD
Power Dissipation Capacitance (Note 7)
Typical @ 25°C, V
CC
= 5.0 V
pF
18
7. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the noload dynamic
power consumption; P
D
= C
PD
V
CC
2
f
in
+ I
CC
V
CC
.
NOISE CHARACTERISTICS (Input t
r
= t
f
= 3.0 ns, C
L
= 50 pF, V
CC
= 5.0 V)
Symbol
Characteristic
T
A
= 25°C
Unit
Typ Max
V
OLP
Quiet Output Maximum Dynamic V
OL
0.8 1.0 V
V
OLV
Quiet Output Minimum Dynamic V
OL
0.8 1.0 V
V
IHD
Minimum High Level Dynamic Input Voltage 3.5 V
V
ILD
Maximum Low Level Dynamic Input Voltage 1.5 V

MC74VHC50D

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Buffers & Line Drivers 2-5.5V CMOS Hex
Lifecycle:
New from this manufacturer.
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