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IRGP4086PBF

P1-P3P4-P6P7-P7
IRGP4086PbF
4 www.irf.com
Fig 7. Maximum Collector Current vs. Case Temperature
Fig 8. Typical Repetitive Peak Current vs. Case Temperature
Fig 10. Typical E
PULSE
vs. Collector-to-Emitter Voltage
Fig 9. Typical E
PULSE
vs. Collector Current
Fig 11. E
PULSE
vs. Temperature
Fig 12. Forward Bias Safe Operating Area
0 25 50 75 100 125 150
T
C
,
Case Temperature (°C)
0
10
20
30
40
50
60
70
80
I
C
,
C
o
l
l
e
c
t
o
r
C
u
r
r
e
n
t
(
A
)
25 50 75 100 125 150
Case Temperature (°C)
0
100
200
300
R
e
p
e
t
i
t
i
v
e
P
e
a
k
C
u
r
r
e
n
t
(
A
)
ton= 2μs
Duty cycle = 0.1
Half Sine Wave
1 10 100 1000
V
CE
(V)
1
10
100
1000
I
C
(
A
)
10 μs
100 μs
1ms
25 50 75 100 125 150
T
J
, Temperature (ºC)
0
400
800
1200
1600
2000
E
n
e
r
g
y
p
e
r
P
u
l
s
e
(
μ
J
)
V
CC
= 240V
L = 220nH
t = 1μs half sine
C= 0.4μF
C= 0.3μF
C= 0.2μF
150 160 170 180 190 200 210 220 230 240
V
CE,
Collector-to-Emitter Voltage (V)
200
400
600
800
1000
1200
1400
1600
E
n
e
r
g
y
p
e
r
P
u
l
s
e
(
μ
J
)
L = 220nH
C = 0.4μF
100°C
25°C
160 170 180 190 200 210 220 230
I
C
, Peak Collector Current (A)
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
E
n
e
r
g
y
p
e
r
P
u
l
s
e
(
μ
J
)
V
CC
= 240V
L = 220nH
C = variable
100°C
25°C
IRGP4086PbF
www.irf.com 5
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case (IGBT)
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
0 100 200 300
V
CE
(V)
10
100
1000
10000
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Cies
Coes
Cres
0 20406080100
Q
G
Total Gate Charge (nC)
0
5
10
15
20
25
V
G
E
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 240V
V
DS
= 200V
V
DS
= 150V
I
D
= 25A
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W)
τι
(sec)
0.084697 0.000038
0.374206 0.001255
0.341867 0.013676
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
τ
C
Ci= τi/Ri
Ci= τi/Ri
IRGP4086PbF
6 www.irf.com
Fig 16a. t
st
and E
PULSE
Test Circuit
Fig 16b. t
st
Test Waveforms
Fig 16c. E
PULSE
Test Waveforms
1K
VCC
DUT
0
L
Fig. 17 - Gate Charge Circuit (turn-off)
DRIVER
DUT
L
C
VCC
RG
RG
B
A
Ipulse
Energy
V
CE
I
C
Current
PULSE A
PULSE B
t
ST
P1-P3P4-P6P7-P7

IRGP4086PBF

Mfr. #:
Buy IRGP4086PBF
Manufacturer:
Infineon / IR
Description:
IGBT Transistors 300V 40A Ultra Fast
Lifecycle:
New from this manufacturer.
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