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SIB800EDK-T1-GE3

P1-P3P4-P6P7-P9
www.vishay.com
4
Document Number: 68860
S-83045-Rev. B, 22-Dec-08
Vishay Siliconix
SiB800EDK
New Product
SCHOTTKY TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
100010110
-1
10
-4
100
0.2
0.1
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 100 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
0.05
0.02
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
10
-1
10
-4
1
0.2
0.1
0.05
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.02
1
0.1
Single Pulse
Document Number: 68860
S-83045-Rev. B, 22-Dec-08
www.vishay.com
5
Vishay Siliconix
SiB800EDK
New Product
MOSFET TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
Gate Current vs. Gate-to-Source Voltage
Output Characteristics
On-Resistance vs. Drain Current
0
5
10
15
20
25
30
35
02468
V
GS
- Gate-to-Source Voltage (V)
- Gate Current (mA)I
GSS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
GS
=5thru 2 V
V
GS
=1V
V
GS
=1.5V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
GS
=1.5V
V
GS
=2.5V
V
GS
=1.8V
V
GS
=4.5V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
Gate Current vs. Gate-to-Source Voltage
Transfer Characteristics
Gate Charge
V
GS
- Gate-to-Source Voltage (V)
- Gate Current (A)
I
GSS
10
-10
10
-9
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
02468
T
J
= 150 °C
T
J
= 25 °C
0.0
0.4
0.
8
1.2
1.6
2.0
0.0 0.5 1.0 1.5 2.0
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
2
4
0.0 0.3 0.6 0.9 1.2 1.5
V
DS
=16V
I
D
=1.7A
V
DS
=10V
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
www.vishay.com
6
Document Number: 68860
S-83045-Rev. B, 22-Dec-08
Vishay Siliconix
SiB800EDK
New Product
MOSFET TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
Normalized On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
- 50 - 25 0 25 50 75 100 125 150
V
GS
=1.5V;I
D
=0.4A
V
GS
=4.5V,2.5V,1.8V;I
D
=1.6A
T
J
-Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)
0.0
0.2
0.4
0.6
0.8
1.0
012345
T
J
=25 °C
T
J
= 125 °C
I
D
=1.6A
- On-Resistance (Ω)
R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0.4
0.5
0.6
0.7
0.8
0.9
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
Source-Drain Diode Forward Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
0.01
0.1
1
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
T
J
= 25 °C
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
0
2
4
6
8
Power (W)
Time (s)
10 10000.10.010.001 1001
10
0.1
0.1 1 10
1
T
A
= 25 °C
Single Pulse
1ms
0.01
10 ms
100 ms
1s,10s
DC
BVDSS Limited
100
100 µs
Limited byR
DS(on)
*
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)
I
D
P1-P3P4-P6P7-P9

SIB800EDK-T1-GE3

Mfr. #:
Buy SIB800EDK-T1-GE3
Manufacturer:
Vishay
Description:
MOSFET N-CH 20V 1.5A SC75-6
Lifecycle:
New from this manufacturer.
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