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APT2X151DL60J

P1-P3P4-P4
052-6320 Rev B 6 - 2009
PRODUCT APPLICATIONS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
- Motor Controllers
- Converters
• Snubber Diode
• Uninterruptible Power Supply
• Induction Heating
• High Speed Rectifi ers
MAXIMUM RATINGS All Ratings per Diode: T
C
= 25°C unless otherwise specifi ed.
Microsemi Website - http://www.microsemi.com
Symbol Characteristic / Test Conditions Ratings Unit
V
R
Maximum D.C. Reverse Voltage
600 VoltsV
RRM
Maximum Peak Repetitive Reverse Voltage
V
RWM
Maximum Working Peak Reverse Voltage
I
F(AV)
Maximum Average Forward current (T
C
= 40°C, Duty Cycle = 0.5) 150
AmpsI
F(RMS)
RMS Forward Currrent (Square wave, 50% duty) 165
I
FSM
Non-Repetitive Forward Surge Current (T
J
= 45°C, 8.3 ms) 1000
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to 175 °C
Symbol Characteristic / Test Conditions Min Typ Max Unit
V
F
Forward Voltage
I
F
= 150A 1.25 1.6
VoltsI
F
= 300A 2.0
I
F
= 150A, T
J
= 125°C 1.25
I
RM
Maximum Reverse Leakage Current
V
R
= 600V 25
A
V
R
= 600V, T
J
= 125°C 250
C
T
Junction Capacitance, V
R
= 200V 139 pF
STATIC ELECTRICAL CHARACTERISTICS
1 Continuous current limited by package lead temperature.
SOT-227
1
2
3
4
ISOTOP
fi
"UL Recongnized"
file # 145592
PRODUCT BENEFITS
• Low Losses
• Low Noise Switching
• Cooler Operation
• Higher Reliability Systems
• Increased System Power
Density
PRODUCT FEATURES
• Ultrafast Recovery Times (t
rr
)
• Soft Recoverery Characteristics
• Low Forward Voltage
• Low Forward Voltage
• High Blocking Voltage
• Low Leakage Current
Ultrafast Soft Recovery Dual Rectifi er Diode
APT2X151DL60J
APT2X151DL60J
APT2X150DL60J
600V 150A
Anti-Parallel Parallel
2
1
323
414
APT2X150DL60J
APT2X151_150DL60J
DYNAMIC CHARACTERISTICS
052-6320 Rev B 6 - 2009
THERMAL AND MECHANICAL CHARACTERISTICS
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
Symbol Characteristic / Test Conditions Min Typ Max Unit
t
rr
Reverse Recovery Time I
F
= 1A, di
F
/dt = -15A/s, V
R
= 30V, T
J
= 25°C 51
ns
t
rr
Reverse Recovery Time
I
F
= 150A, di
F
/dt = -200A/s
V
R
= 400V, T
C
= 25°C
408
Q
rr
Reverse Recovery Charge 2387 nC
I
RRM
Maximum Reverse Recovery Current 13 Amps
t
rr
Reverse Recovery Time
I
F
= 150A, di
F
/dt = -200A/s
V
R
= 400V, T
C
= 125°C
639 ns
Q
rr
Reverse Recovery Charge 7253 nC
I
RRM
Maximum Reverse Recovery Current 21 Amps
t
rr
Reverse Recovery Time
I
F
= 150A, di
F
/dt = -1000A/
s V
R
= 400V, T
C
= 125°C
299 ns
Q
rr
Reverse Recovery Charge 12075 nC
I
RRM
Maximum Reverse Recovery Current 68 Amps
Symbol Characteristic / Test Conditions Min Typ Max Unit
R
JC
Junction-to-Case Thermal Resistance 0.56 °C/W
V
Isolation
RMS Voltage (50-60mHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) 2500
W
T
Package Weight
1.03 oz
29.2 g
Torque Maximum Mounting Torque
10 lb·in
1.1 N·m
0
0.1
0.2
0.3
0.4
0.5
0.6
10
-5
10
-4
10
-3
10
-2
10 1.0
-1
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Peak T
J
= P
DM
x Z
θJC
+
T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
Z
JC
, THERMAL IMPEDANCE (°C/W)
052-6320 Rev B 6 - 2009
APT2X151_150DL60J
TYPICAL PERFORMANCE CURVES
0
10
20
30
40
50
60
70
80
0 200 400 600 800 1000
0
0.2
0.4
0.6
0.8
1
1.2
0 25 50 75 100 125 150
0
2000
4000
6000
8000
10000
12000
14000
0 200 400 600 800 1000
0
100
200
300
400
500
600
700
0 200 400 600 800 1000
0
50
100
150
200
250
300
350
400
0 0.5 1 1.5 2 2.5 3
I
RRM
Q
RR
t
RR
150A
75A
150A
75A
T
J
= 55°C
T
J
= 150°C
V
F
, ANODE-TO-CATHODE VOLTAGE (V)
FIGURE 2, Forward Current vs. Forward Voltage
I
F
, FORWARD CURRENT (A)
T
J
= 25°C
T
J
= 125°C
-di
F
/dt, CURRENT RATE OF CHANGE (A/s )
FIGURE 3, Reverse Recovery Time vs. Current Rate of Change
t
rr
, COLLECTOR CURRENT (A)
Q
rr
, REVERSE RECOVERY CHARGE
(nC)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 6, Dynamic Parameters vs Junction Temperature
K
f
, DYNAMIC PARAMETERS
(Normalized to 1000A/s)
I
RRM
, REVERSE RECOVERY CURRENT
(A)
Case Temperature (°C)
FIGURE 7, Maximum Average Forward Current vs. Case Temperature
I
F(AV)
(A)
0
200
400
600
800
1000
1200
1400
1 10 100 500
V
R
, REVERSE VOLTAGE (V)
FIGURE 8, Junction Capacitance vs. Reverse Voltage
C
J
, JUNCTION CAPACITANCE (pF)
T
J
= 125°C
V
R
= 400V
T
J
= 125°C
V
R
= 400V
-di
F
/dt, CURRENT RATE OF CHANGE (A/s )
FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change
-di
F
/dt, CURRENT RATE OF CHANGE (A/s )
FIGURE 5, Reverse Recovery Current vs. Current Rate of Change
T
J
= 125°C
V
R
= 400V
150A
75A
0
20
40
60
80
100
120
140
160
180
200
25 50 75 100 125 150 175
P1-P3P4-P4

APT2X151DL60J

Mfr. #:
Buy APT2X151DL60J
Manufacturer:
Microchip / Microsemi
Description:
Discrete Semiconductor Modules Fast Recovery Epitaxial Diode - DL
Lifecycle:
New from this manufacturer.
Delivery:
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