52
VTP Process Photodiodes VTP1232H
(Also available in infrared transmitting visible
blocking version)
PRODUCT DESCRIPTION
This photodiode features the largest detection
area available in a clear, endlooking T-1¾
package. Combined with excellent dark current,
it can fulfill the demands of many difficult
applications.
PACKAGE DIMENSIONS inch (mm)
CASE 26 T-1¾
CHIP ACTIVE AREA: .0036 in
2
(2.326 mm
2
)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -40°C to 100°C
Operating Temperature: -40°C to 100°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, pages 45-46)
SYMBOL CHARACTERISTIC TEST CONDITIONS
VTP1232H
UNITS
Min. Typ. Max.
I
SC
Short Circuit Current H = 100 fc, 2850 K 100 µA
TC I
SC
I
SC
Temperature Coefficient 2850 K 0.20 %/°C
Re Responsivity 880 nm 0.06 0.076 A/(W/cm
2
)
V
OC
Open Circuit Voltage H = 100 fc, 2850 K .42 mV
TC V
OC
V
OC
Temperature Coefficient 2850 K -2.0 mV/°C
I
D
Dark Current H = 0, VR = 10 V 25 nA
C
J
Junction Capacitance H = 0, V = 0 V .18 .30 nF
λ
range
Spectral Application Range 400 1100 nm
λ
p
Spectral Response - Peak 920 nm
S
R
Sensitivity @ Peak 0.60 A/W
Excelitas Technologies, 22001 Dumberry, Vaudreuil, QC, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.excelitas.com
