Product Standards
Transistors with Built-in Resistor
DRA2543E0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
1.
Page
+85 °COperating ambient temperature Topr -40 to
Parameter Symbol
3
Rating
1.
2.
3.
Unit
Packaging
Mini3-G3-B
SC-59A
Collector
Embossed type (Thermo-compression sealing) : 000 pcs / reel (standard)
JEITA
Low collector-emitter saturation voltage Vce(sat)
Marking Symbol:
UY
Code
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Base
3
Unit: mm
Panasonic
Emitter
TO-236AA/SOT-23
DRA2543E0L
Silicon PNP epitaxial planar type
For digital circuit
Complementary to DRC2543E
Features
Max
k
Typ
1of
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Internal Connection
Resistance
value
R1
4.7
k
R2 4.7
Collector-base voltage (Emitter open) VCBO -50 V
Collector-emitter voltage (Base open) VCEO -50 V
Collector current IC -500 mA
Total power dissipation PT 200 mW
Unit
Junction temperature Tj 150 °C
+150 °C
MinConditions
Storage temperature Tstg -55 to
IC = -10 μA, IE = 0 -50 V
Parameter Symbol
IC = -2 mA, IB = 0 -50 V
Collector-base voltage (Emitter open) VCBO
VCB = -50 V, IE = 0 -1 μA
Collector-emitter voltage (Base open) VCEO
VCE = -50 V, IB = 0 -1 μA
Collector-base cutoff current (Emitter open)
ICBO
VEB = -6 V, IC = 0 -2 mA
Collector-emitter cutoff current (Base open)
ICEO
VCE = -10 V, IC = -100 mA 50 -
Emitter-base cutoff current (Collector open)
IEBO
IC = -100 mA, IB = -5 mA -0.25
VCE = -0.2 V, IC = -50 mA
Vi(off)
V
Forward current transfer ratio hFE
Input voltage
Vi(on)
Collector-emitter saturation voltage VCE(sat)
-3.6
V
k
-0.7 V VCE = -5 V, IC = -100 μA
-30% 4.7
-
Input resistance R1
Resistance ratio R1/R2 0.8 1.0 1.2
+30%
C
B
R
1
R
2
E
2.8
2.9
1.1
1.5
0.4
1.9
0.16
1
3
(0.95)(0.95)
2
