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BUK7606-75B,118
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
BUK7606-75B
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 03 — 3 February 201
1
6 of 13
NXP Semiconductors
BUK7606-75B
N-channel T
renchMOS st
andard level FET
T
j
= 25 °C; I
D
= 25 A
Fig 5.
Output charac
teristics: drain curren
t as a
function of drain-source voltage; typica
l values
Fig 6.
Drain-source on
-state resistance as a function
of gate-source voltage; typical value
s
Fig 7.
Sub-threshold d
rain current as a function of
gate-source voltage
Fig 8.
Gate-source threshold voltag
e as a function of
junction tempe
rature
03ng98
0
100
200
300
400
02468
1
0
V
DS
(V)
I
D
(A)
V
GS
= 4.5 V
5.5
6.5
20
10
8
7
03ng97
4
5
6
7
8
51
0
1
5
2
0
V
GS
(V)
R
DSon
(m
Ω
)
03aa35
V
GS
(V)
06
4
2
10
−
4
10
−
5
10
−
2
10
−
3
10
−
1
I
D
(A)
10
−
6
min
typ
max
03ng95
0
20
40
60
80
100
120
02
0
4
0
6
0
I
D
(A)
g
fs
(S)
BUK7606-75B
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 03 — 3 February 201
1
7 of 13
NXP Semiconductors
BUK7606-75B
N-channel T
renchMOS st
andard level FET
Fig 9.
Transfer characteristics: drain cu
rrent as a
function of gate-source voltag
e; typical values
Fig 10.
Gate-source threshold voltage as a func
tion of
junction tempe
rature
Fig 11.
Drain-source on-state
resistance as a function
of drain current; typical values
Fig 12.
Normalized drain-sou
rce on-state resistance
factor as a function of junction temperature
03ng96
0
20
40
60
80
100
0246
V
GS
(V)
I
D
(A)
T
j
= 175
°
C
T
j
= 25
°
C
T
j
(
°
C)
−
60
180
120
06
0
03aa32
2
3
1
4
5
V
GS(th)
(V)
0
max
typ
min
03ng99
4
6
8
10
12
14
0
50
100
150
200
I
D
(A)
R
DSon
(m
Ω
)
V
GS
= 4.5 V
10
8
6.5
5
5.5
6
T
j
(
°
C)
−
60
180
120
06
0
03nb25
0.8
1.6
2.4
a
0
BUK7606-75B
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 03 — 3 February 201
1
8 of 13
NXP Semiconductors
BUK7606-75B
N-channel T
renchMOS st
andard level FET
Fig 13.
Gate-source voltage as a fun
ction of turn-on
gate charge; typical values
Fig
14.
Input, output a
nd reverse trans
fer capacitances
as a function of d
rain-source voltage; ty
pical
values
Fig 15.
Reverse diode current as a fu
nction of reverse diode vo
ltage; typical value
03ng94
0
2
4
6
8
10
0
2
04
06
08
0
1
0
0
Q
G
(nC)
V
GS
(V)
V
DD
= 14 V
V
DD
= 60 V
03nh00
0
2000
4000
6000
8000
10
−
1
1
10
10
2
V
DS
(V)
C
(pF)
C
iss
C
oss
C
rss
03ng93
0
20
40
60
80
100
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(V)
I
S
(A)
T
j
= 175
°
C
T
j
= 25
°
C
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
BUK7606-75B,118
Mfr. #:
Buy BUK7606-75B,118
Manufacturer:
Nexperia
Description:
MOSFET HIGH PERF TRENCHMOS
Lifecycle:
New from this manufacturer.
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