Characteristics STPS40M60C
4/10 Doc ID 018813 Rev 1
Figure 4. Normalized avalanche power
derating versus pulse duration
Figure 5. Normalized avalanche power
derating versus junction
temperature
0.001
0.01
0.10.01 1
0.1
10 100
1000
1
P(t
p
)
P (1µs)
ARM
ARM
t (µs)
p
0
0.2
0.4
0.6
0.8
1
1.2
25 50 75 100 125
150
P(T)
P (25 °C)
ARM j
ARM
T (°C)
j
Figure 6. Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
Figure 7. Relative thermal impedance
junction to case versus pulse
duration
I (A)
M
0
20
40
60
80
100
120
140
160
180
200
220
240
260
1.E-03 1.E-02 1.E-01 1.E+00
T
C
=25°C
T
C
=75°C
T
C
=125°C
I
M
t
δ
=0.5
t(s)
Z/R
th(j-c) th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Single pulse
t (s)
p
Figure 8. Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
Figure 9. Junction capacitance versus
reverse voltage applied
(typical values, per diode)
I (mA)
R
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
0102030405060
T
j
=150°C
T
j
=125°C
T
j
=25°C
T
j
=100°C
T
j
=50°C
T
j
=75°C
V (V)
R
C(pF)
100
1000
10000
110100
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
V (V)
R
