VS-42CTQ030STRRPBF

VS-42CTQ030SPbF, VS-42CTQ030-1PbF
www.vishay.com
Vishay Semiconductors
Revision: 15-Aug-15
1
Document Number: 94221
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 2 x 20 A
FEATURES
150 °C T
J
operation
Center tap configuration
Very low forward voltage drop
High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
High purity, high temperature epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
AEC-Q101 qualified
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier module has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, freewheeling
diodes, and reverse battery protection.
PRODUCT SUMMARY
I
F(AV)
2 x 20 A
V
R
30 V
V
F
at I
F
0.38 V
I
RM
max. 183 mA at 125 °C
T
J
max. 150 °C
E
AS
13
Package TO-263AB (D
2
PAK), TO-262AA
Diode variation Common cathode
TO-262AATO-263AB (D
2
PAK)
Base
common
cathode
Anode Anode
Common
cathode
1
3
2
2
Base
common
cathode
Anode Anode
Common
cathode
1
3
2
2
VS-42CTQ030SPbF VS-42CTQ030-1PbF
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 40 A
V
RRM
30 V
I
FSM
t
p
= 5 μs sine 1100 A
V
F
20 A
pk
, T
J
= 125 °C (per leg) 0.38 V
T
J
Range -55 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL
VS-42CTQ030SPbF
VS-42CTQ030-1PbF
UNITS
Maximum DC reverse voltage V
R
30 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward
current, see fig. 5
per leg
I
F(AV)
50 % duty cycle at T
C
= 121 °C, rectangular waveform
20
A
per device 40
Maximum peak one cycle non-repetitive
surge current per leg, see fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
1100
10 ms sine or 6 ms rect. pulse 360
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 3 A, L = 2.90 mH 13 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
3A
VS-42CTQ030SPbF, VS-42CTQ030-1PbF
www.vishay.com
Vishay Semiconductors
Revision: 15-Aug-15
2
Document Number: 94221
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1
V
FM
(1)
20 A
T
J
= 25 °C
0.48
V
40 A 0.57
20 A
T
J
= 125 °C
0.38
40 A 0.51
Maximum reverse leakage current per leg
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
3
mA
T
J
= 125 °C 183
Threshold Voltage V
F(TO)
T
J
=T
J
maximum
0.22 V
Forward slope resistance r
t
6.76 m:
Maximum junction capacitance per leg C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C 2840 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-55 to +150 °C
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation
2.0
°C/W
Maximum thermal resistance,
junction to case per package
1.0
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf cm
(lbf in)
maximum 12 (10)
Marking device
Case style TO-263AB (D
2
PAK) 42CTQ030S
Case style TO-262AA 42CTQ030-1
VS-42CTQ030SPbF, VS-42CTQ030-1PbF
www.vishay.com
Vishay Semiconductors
Revision: 15-Aug-15
3
Document Number: 94221
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
1
100
10
1000
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.6 1.0 1.4
1.8
0 0.2 0.4 0.8 1.2 1.6
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.01
10
100
1
0.1
1000
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
1051520
30
25
0
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
100
1000
10 000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
105 152025
35
30
0
T
J
= 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
100 10
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C

VS-42CTQ030STRRPBF

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 78-VS42CTQ030STRRM3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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