NL17SH125P5T5G

© Semiconductor Components Industries, LLC, 2012
September, 2012 Rev. 0
1 Publication Order Number:
NL17SH125/D
NL17SH125
Non-Inverting 3-State Buffer
The NL17SH125 MiniGatet is an advanced highspeed CMOS
noninverting buffer in ultrasmall footprint.
The NL17SH125 requires the 3state control input (OE
) to be set
High to place the output in the high impedance state.
The NL17SH125 input structures provide protection when voltages
up to 7.0 V are applied, regardless of the supply voltage.
Features
High Speed: t
PD
= 3.8 ns (Typ) at V
CC
= 5.0 V
Low Power Dissipation: I
CC
= 1.0 mA (Max) at T
A
= 25°C
Power Down Protection Provided on Inputs
Balanced Propagation Delays
These are PbFree and HalideFree Devices
Figure 1. Pinout (Top View)
Figure 2. Logic Symbol
V
CC
OE
IN A
OUT Y
GND
1
2
3
5
4
IN A
OUT Y
EN
OE
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ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
PIN ASSIGNMENT
1
2
3OE
IN A
GND
4
5V
CC
OUT Y
MARKING
DIAGRAM
SOT953
CASE 527AE
T = Specific Device Code
(Rotated 90°)
M = Month Code
FUNCTION TABLE
L
H
X
Input A Output Y
L
H
Z
Input OE
L
L
H
M
1
T
NL17SH125
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2
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage 0.5 to +7.0 V
V
IN
DC Input Voltage 0.5 to +7.0 V
V
OUT
DC Output Voltage 0.5 to V
CC
+ 0.5 V
I
IK
DC Input Diode Current V
IN
< GND 20 mA
I
OK
DC Output Diode Current V
OUT
< GND, V
OUT
> V
CC
±20 mA
I
OUT
DC Output Source/Sink Current ±12.5 mA
I
CC
DC Supply Current per Supply Pin ±25 mA
I
GND
DC Ground Current per Ground Pin ±25 mA
T
STG
Storage Temperature Range 65 to +150 °C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
T
J
Junction Temperature Under Bias +150 °C
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 @ 0.125 in
V
ESD
ESD Withstand Voltage Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
>3000
>150
N/A
V
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125°C (Note 5) ±100 mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2ounce copper trace with no air flow.
2. Tested to EIA/JESD22A114A.
3. Tested to EIA/JESD22A115A.
4. Tested to JESD22C101A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Characteristics Min Max Unit
V
CC
Positive DC Supply Voltage 1.65 5.5 V
V
IN
Digital Input Voltage 0.0 5.5 V
V
OUT
Output Voltage 0.0 V
CC
V
T
A
Operating Temperature Range 55 +125 °C
Dt / DV
Input Transition Rise or Fail Rate V
CC
= 3.3 V ± 0.3 V
V
CC
= 5.0 V ± 0.5 V
0
0
100
20
ns/V
NL17SH125
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3
DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Test Conditions
V
CC
(V)
T
A
= 255C T
A
v 855C *555C to 1255C
Unit
Min Typ Max Min Max Min Max
V
IH
HighLevel Input
Voltage
1.65 to
2.0
0.75 x
V
CC
0.75 x
V
CC
V
2.3 to
5.5
0.70 x
V
CC
0.70 x
V
CC
V
IL
LowLevel Input
Voltage
1.65 to
2.0
0.25 x
V
CC
0.25 x
V
CC
0.25 x
V
CC
V
2.3 to
5.5
0.30 x
V
CC
0.30 x
V
CC
0.30 x
V
CC
V
OH
HighLevel Output
Voltage
V
IN
= V
IH
or V
IL
I
OH
= 50 mA
2.0
3.0
4.5
1.9
2.9
4.4
2.0
3.0
4.5
1.9
2.9
4.4
1.9
2.9
4.4
V
V
IN
= V
IH
or V
IL
I
OH
= 4 mA
I
OH
= 8 mA
3.0
4.5
2.58
3.94
2.48
3.80
2.34
3.66
V
OL
LowLevel Output
Voltage
V
IN
= V
IH
or V
IL
I
OL
= 50 mA
2.0
3.0
4.5
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
IN
= V
IH
or V
IL
I
OL
= 4 mA
I
OL
= 8 mA
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
I
IN
Input Leakage Current 0 V
IN
5.5 V 0 to 5.5 $0.1 $1.0 $1.0
mA
I
CC
Quiescent Supply
Current
0 V
IN
V
CC
5.5 1.0 10 40
mA
I
OZ
3State Leakage
Current
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
0.0 $0.25 $2.5 $2.5
mA
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 3.0 ns)
Symbol Parameter
V
CC
(V)
Test
Conditions
T
A
= 255C T
A
v 855C *555C to 1255C
Unit
Min Typ Max Min Max Min Max
t
PLH
,
t
PHL
Propagation Delay,
A to Y
3.0 to 3.6 C
L
= 15 pF
C
L
= 50 pF
5.6
8.1
8.0
11.5
1.0
1.0
9.5
13.0
12.0
16.0
ns
4.5 to 5.5 C
L
= 15 pF
C
L
= 50 pF
3.8
5.3
5.5
7.5
1.0
1.0
6.5
8.5
8.5
10.5
t
PZL
,
t
PZH
Output Enable Time,
OE to Y
3.0 to 3.6 C
L
= 15 pF
C
L
= 50 pF
5.4
7.9
8.0
11.5
1.0
1.0
9.5
13.0
11.5
15.0
ns
4.5 to 5.5 C
L
= 15 pF
C
L
= 50 pF
3.6
5.1
5.1
7.1
1.0
1.0
6.0
8.0
7.5
9.5
t
PLZ
,
t
PHZ
Output Enable Time,
OE
to Y
3.0 to 3.6 C
L
= 15 pF
C
L
= 50 pF
6.5
8.0
9.7
13.2
1.0
1.0
11.5
15.0
14.5
18.5
ns
4.5 to 5.5 C
L
= 15 pF
C
L
= 50 pF
4.8
7.0
6.8
8.8
1.0
1.0
8.0
10
10.0
12.0
C
IN
Input Capacitance 5.5 10 10 10 pF
C
PD
Power Dissipation
Capacitance (Note 6)
5.0 11 pF
6. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the noload dynamic
power consumption; P
D
= C
PD
V
CC
2
f
in
+ I
CC
V
CC
.

NL17SH125P5T5G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Buffers & Line Drivers NON-INVERTING 3-STATE BUF
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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