PDTD123EK,115

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1. Product profile
1.1 General description
500 mA NPN Resistor-Equipped Transistors (RET) family.
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
1.2 Features
1.3 Applications
1.4 Quick reference data
PDTD123E series
NPN 500 mA, 50 V resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 02 — 16 November 2009 Product data sheet
Table 1. Product overview
Type number Package PNP complement
NXP JEITA JEDEC
PDTD123EK SOT346 SC-59A TO-236 PDTB123EK
PDTD123ES
[1]
SOT54 SC-43A TO-92 PDTB123ES
PDTD123ET SOT23 - TO-236AB PDTB123ET
Built-in bias resistors Reduces component count
Simplifies circuit design Reduces pick and place costs
500 mA output current capability ±10 % resistor ratio tolerance
Digital application in automotive and
industrial segments
Cost saving alternative for BC817 series
in digital applications
Controlling IC inputs Switching loads
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
collector-emitter voltage open base - - 50 V
I
O
output current (DC) - - 500 mA
R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 0.9 1.0 1.1
PDTD123E_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 16 November 2009 2 of 10
NXP Semiconductors
PDTD123E series
NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Symbol
SOT54
1 input (base)
2 output (collector)
3 GND (emitter)
SOT54A
1 input (base)
2 output (collector)
3 GND (emitter)
SOT54 variant
1 input (base)
2 output (collector)
3 GND (emitter)
SOT23, SOT346
1 input (base)
2 GND (emitter)
3 output (collector)
001aab34
7
1
2
3
006aaa145
2
3
1
R1
R2
001aab34
8
1
2
3
006aaa145
2
3
1
R1
R2
001aab44
7
1
2
3
006aaa145
2
3
1
R1
R2
006aaa14
4
12
3
sym007
3
2
1
R1
R2

PDTD123EK,115

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
TRANS PREBIAS NPN 250MW SMT3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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