Product Standards
Transistors with Built-in Resistor
DRC2144T0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note) 1.
Page
+85 °COperating ambient temperature Topr -40 to
1.
2.
3.
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
Parameter Symbol Rating Unit
Marking Symbol:
NP
Code
Base
Emitter
TO-236AA/SOT-23
Panasonic
Packaging
Mini3-G3-B
JEITA
DRC2144T0L
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA2144T
Features
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
High forward current transfer ratio hFE with excellent linearity
SC-59A
Collector
Unit: mm
Internal Connection
Resistance
value
1of3
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO 50 V
Collector-emitter voltage (Base open) VCEO 50 V
Collector current IC 100 mA
Total power dissipation PT 200 mW
Symbol Conditions
Storage temperature Tstg -55 to
Collector-base voltage (Emitter open)
VCBO IC = 10 μA, IE = 0 50 V
Parameter
Collector-emitter voltage (Base open)
VCEO IC = 2 mA, IB = 0 50 V
Collector-base cutoff current (Emitter open)
ICBO VCB = 50 V, IE = 0 0.1 μA
Collector-emitter cutoff current (Base open)
ICEO VCE = 50 V, IB = 0 0.5 μA
Emitter-base cutoff current (Collector open)
IEBO VEB = 6 V, IC = 0 0.01 mA
Forward current transfer ratio
hFE VCE = 10 V, IC = 5 mA 160 460 -
2.8
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 0.5 mA
Input voltage
Vi(on) VCE = 0.2 V, IC = 5 mA
Vi(off) VCE = 5 V, IC = 100 μAV
0.25 V
Input resistance
R1 -30%
°C
47 +30%
k
V
0.4
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
R1
47
k
+150 °C
Junction temperature Tj 150
2.8
2.9
1.1
1.5
0.4
1.9
0.16
1
3
(0.95)(0.95)
2
C
B
R
1
E
