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M74HC366RM13TR

P1-P3P4-P6P7-P9P10-P10
1/10July 2001
■ HIGH SPEED:
t
PD
= 10ns (TYP.) at V
CC
= 6V
■ LOW POWER DISSIPATION:
I
CC
= 4µA(MAX.) at T
A
=25°C
■ HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28 % V
CC
(MIN.)
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 6mA (MIN)
■ BALANCED PROPAGATION DELAYS:
t
PLH
≅ t
PHL
■ WIDE OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 6V
■ PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 366
DESCRIPTION
The 74HC366 is an advanced high-speed CMOS
HEX BUS BUFFER (3-STATE) fabricated with
silicon gate C
2
MOS technology.
All six buffers are controlled by the combination of
two enable inputs (G1
and G2); all outputs of
these buffers are enabled only when both G1
and
G2
inputs are held low, under all other conditions
these output are disabled in a high-impedance
state.
The M74HC366 has inverting outputs.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
M74HC366
HEX BUS BUFFER
WITH 3 STATE OUTPUTS (INVERTING)
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE TUBE T & R
DIP M74HC366B1R
SOP M74HC366M1R M74HC366RM13TR
TSSOP M74HC366TTR
TSSOPDIP SOP
M74HC366
2/10
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
X : Don’t Care
Z : High Impedance
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65
°C
; derate to 300mW by 10mW/
°C
from 65
°C to 85°C
RECOMMENDED OPERATING CONDITIONS
PIN No SYMBOL NAME AND FUNCTION
1, 15 G1
, G2 Output Enable Inputs
2, 4, 6, 10,
12, 14
1A to 6A Data Inputs
3, 5, 7, 9, 11,
13
1Y
to 6Y Data Outputs
8 GND Ground (0V)
16 V
CC
Positive Supply Voltage
INPUTS OUTPUTS
G1
G2 An Y
LLLH
LLHL
HXXZ
XHXZ
Symbol Parameter Value Unit
V
CC
Supply Voltage
-0.5 to +7 V
V
I
DC Input Voltage -0.5 to V
CC
+ 0.5
V
V
O
DC Output Voltage -0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
± 20 mA
I
OK
DC Output Diode Current
± 20 mA
I
O
DC Output Current
± 35 mA
I
CC
or I
GND
DC V
CC
or Ground Current
± 70 mA
P
D
Power Dissipation
500(*) mW
T
stg
Storage Temperature
-65 to +150 °C
T
L
Lead Temperature (10 sec)
300 °C
Symbol Parameter Value Unit
V
CC
Supply Voltage
2 to 6 V
V
I
Input Voltage 0 to V
CC
V
V
O
Output Voltage 0 to V
CC
V
T
op
Operating Temperature
-55 to 125 °C
t
r
, t
f
Input Rise and Fall Time V
CC
= 2.0V
0 to 1000 ns
V
CC
= 4.5V
0 to 500 ns
V
CC
= 6.0V
0 to 400 ns
M74HC366
3/10
DC SPECIFICATIONS
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
IH
High Level Input
Voltage
2.0 1.5 1.5 1.5
V4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2
V
IL
Low Level Input
Voltage
2.0 0.5 0.5 0.5
V4.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8
V
OH
High Level Output
Voltage
2.0
I
O
=-20 µA
1.9 2.0 1.9 1.9
V
4.5
I
O
=-20 µA
4.4 4.5 4.4 4.4
6.0
I
O
=-20 µA
5.9 6.0 5.9 5.9
4.5
I
O
=-6.0 mA
4.18 4.31 4.13 4.10
6.0
I
O
=-7.8 mA
5.68 5.8 5.63 5.60
V
OL
Low Level Output
Voltage
2.0
I
O
=20 µA
0.0 0.1 0.1 0.1
V
4.5
I
O
=20 µA
0.0 0.1 0.1 0.1
6.0
I
O
=20 µA
0.0 0.1 0.1 0.1
4.5
I
O
=6.0 mA
0.17 0.26 0.33 0.40
6.0
I
O
=7.8 mA
0.18 0.26 0.33 0.40
I
I
Input Leakage
Current
6.0
V
I
= V
CC
or GND
± 0.1 ± 1 ± 1 µA
I
OZ
High Impedance
Output Leakage
Current
6.0
V
I
= V
IH
or V
IL
V
O
= V
CC
or GND
± 0.5 ± 5 ± 10 µA
I
CC
Quiescent Supply
Current
6.0
V
I
= V
CC
or GND
44080µA
P1-P3P4-P6P7-P9P10-P10

M74HC366RM13TR

Mfr. #:
Buy M74HC366RM13TR
Manufacturer:
STMicroelectronics
Description:
Buffers & Line Drivers Hex Bus Buffer
Lifecycle:
New from this manufacturer.
Delivery:
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