KSE5020S

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

KSE5020

NPN Silicon Transistor

Absolute Maximum Ratings

T

C

=25°C unless otherwise noted

Electrical Characteristics

T

C

=25°C unless otherwise noted

h

FE

Classification

Symbol Parameter Value Units

V

CBO

Collector-Base Voltage 800 V

V

CEO

Collector-Emitter Voltage 500 V

V

EBO

Emitter-Base Voltage 7 V

I

C

Collector Current (DC) 3 A

I

CP

Collector Current (Pulse) 6 A

I

B

Base Current (DC) 1 A

P

C

Collector Dissipation (T

C

=25°C) 30 W

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature - 55 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

Collector-Base Breakdown Voltage I

C

= 1mA, I

E

= 0 800 V

BV

CEO

Collector-Emitter Breakdown Voltage I

C

= 5mA, R

BE

=∞ 500 V

BV

EBO

Emitter-Base Breakdown Voltage I

E

= 1mA, I

C

= 0 7 V

V

CEX

(sus) Collector-Emitter Sustaining Voltage I

C

= 1.5A, I

B

1=-I

B

2= 0.6A

L = 2mH, Clamped

500 V

I

CBO

Collector Cut-off Current V

CB

= 500V, I

E

= 0 10 µA

I

EBO

Emitter Cut-off Current V

EB

= 5V, I

C

= 0 10 µA

h

FE1

h

FE2

DC Current Gain V

CE

= 5V, I

C

= 0.3A

V

CE

= 5V, I

C

= 1.5A

15

8

50

V

CE

(sat) Collector-Emitter Saturation Voltage I

C

= 1.5A, I

B

= 0.3A 1 V

V

BE

(sat) Base-Emitter Saturation Voltage I

C

= 1.5A, I

B

= 0.3A 1.5 V

C

ob

Output Capacitance V

CB

= 10V, f = 1MHz 50 pF

f

T

Current Gain Bandwidth Product V

CE

= 10V, I

C

= 0.3A 18 MHz

t

ON

Turn ON Time V

CC

= 200V

5I

B

1 = -2.5I

B

2=I

C

=2A

RL = 100Ω

0.5 µs

t

S

Storage Time 3 µs

t

F

Fall Time 0.3 µs

Classification R O Y

h

FE1

15 ~ 30 20 ~ 40 30 ~ 50

KSE5020

Feature

• High Voltage, High Quality High Speed Switching : t

F

=0.1µs

• WIDE SOA

1

TO-126

1. Emitter 2.Collector 3.Base

©2001 Fairchild Semiconductor Corporation

KSE5020

Rev. A1, June 2001

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Collector-Emitter Saturation Voltage

Baser-Emitter Saturation Voltage

Figure 4. Base-Emitter On Voltage

Figure 5. Turn On Time

012345678910

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

I

B

=500mA

I

B

=400mA

I

B

=300mA

I

B

=200mA

I

B

=100mA

I

B

=50mA

I

B

=20mA

I

B

=0

I

C

[A], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0.01 0.1 1 10

1

10

100

1000

hFE, DC CURRENT GAIN

I

C

[A], COLLECTOR CURRENT

0.01 0.1 1 10

0.01

0.1

1

10

I

C

=5I

B

V

BE

(sat)

V

CE

(sat)

V

BE

(sat),V

CE

(sat)[V], SATURATION VOLTAGE

I

C

[A], COLLECTOR CURRENT

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

V

CE

=5V

I

C

[A], COLLECTOR CURRENT

V

BE

[V], BASE-EMITTER VOLTAGE

0.1 1 10

0.01

0.1

1

10

V

CC

=200V

I

C

=5I

B1

=-2.5I

B2

t

F

t

ON

t

STG

t

STG

[us], STORAGE TIME

t

ON

[us], TURN ON TIME

t

F

[us], FALL TIME

I

C

[A], COLLECTOR CURRENT

Package Demensions

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

KSE5020

Dimensions in Millimeters

3.25

±0.20

8.00

±0.30

ø3.20

±0.10

0.75

±0.10

#1

0.75

±0.10

2.28TYP

[2.28±0.20]

2.28TYP

[2.28±0.20]

1.60

±0.10

11.00

±0.20

3.90

±0.10

14.20MAX

16.10

±0.20

13.06

±0.30

1.75

±0.20

(0.50)

(1.00)

0.50

+0.10

–0.05

TO-126

KSE5020S

Mfr. #:

Manufacturer:

ON Semiconductor / Fairchild

Description:

Bipolar Transistors - BJT NPN Sil Transistor

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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