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DMN601K-7

P1-P3P4-P5
DMN601K
Document number: DS30652 Rev. 8 - 2
1 of 5
www.diodes.com
August 2013
© Diodes Incorporated
DMN601K
NEW PRODUCT
Source
EQUIVALENT CIRCUIT
Gate
Protection
Diode
Gate
Drain
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance: R
DS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 2kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMN601K-7 SOT23 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2005 2006 2007 2008 2009 2010 2011 2011 2012 2013 2014 2015 2016 2017
Code S T U V W X Y Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT23
Top View
Top View
Pin Out Configuration
D
G
S
ESD PROTECTED TO 2kV
K7K = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September)
e3
Shanghai A/T SiteChengdu A/T Site
Y
M
Y
K7K
YM
K7K
YM
DMN601K
Document number: DS30652 Rev. 8 - 2
2 of 5
www.diodes.com
August 2013
© Diodes Incorporated
DMN601K
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
60 V
Gate-Source Voltage
V
GSS
±20 V
Drain Current (Note 5)
Continuous
Pulsed (Note 6)
I
D
300
800
mA
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
P
D
350 mW
Thermal Resistance, Junction to Ambient
R
JA
357 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-65 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
60
V
V
GS
= 0V
,
I
D
= 10µA
Zero Gate Voltage Drain Current
I
DSS
1.0 µA
V
DS
= 60V,
V
GS
= 0V
Gate-Source Leakage
I
GSS
±10 µA
V
GS =
±20V,
V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.0 1.6 2.5 V
V
DS
= 10V, I
D
=
1mA
Static Drain-Source On-Resistance
R
DS(ON)




2.0
3.0

V
GS =
10V, I
D
= 0.5A
V
GS
= 5V, I
D
= 0.05A
Forward Transfer Admittance
|Y
fs
|
80
ms
V
DS
= 10V, I
D
= 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
50 pF
V
DS
= 25V, V
GS
= 0V, f = 1.0MHz
Output Capacitance
C
oss
25 pF
Reverse Transfer Capacitance
C
rss
5.0 pF
Notes: 5. Device mounted on FR-4 PCB.
6. Pulse width ≤10µS, Duty Cycle ≤1%.
7. Short duration pulse test used to minimize self-heating effect.
DMN601K
Document number: DS30652 Rev. 8 - 2
3 of 5
www.diodes.com
August 2013
© Diodes Incorporated
DMN601K
NEW PRODUCT
0
0.2
0.4
0.6
0.8
1.0
012
3
4
5
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
GS
T , CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage vs. Channel Temperature
ch
0
0.5
1
1.5
2
-50
-25
02550
75 100
125 150
0.1
I DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
D
,
1
10
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
1
I , DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
D
10
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
0
V GATE SOURCE VOLTAGE (V)
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
GS,
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
P1-P3P4-P5

DMN601K-7

Mfr. #:
Buy DMN601K-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET N-Channel
Lifecycle:
New from this manufacturer.
Delivery:
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