NTMFS4841NHT1G

NTMFS4841N
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES
4 V
5.5 V to 10 V
60
0.011
15
0.002
30
1.4
1.0
0.6
1000
10000
0
30
21
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
3
0.013
0.009
0.005
5
Figure 3. OnResistance vs. GatetoSource
Voltage
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAINTOSOURCE RESISTANCE (W)
R
DS(on)
, DRAINTOSOURCE RESISTANCE (W)
Figure 5. OnResistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. DraintoSource Leakage Current
vs. Voltage
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAINTOSOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
55 2551535 45 8565
23
1510 305
3
V
DS
= 10 V
T
J
= 25°C
T
J
= 55°C
T
J
= 125°C
V
GS
= 4.5 V
125
V
GS
= 0 V
I
D
= 30 A
V
GS
= 10 V
50
T
J
= 150°C
T
J
= 25°C
40
0
45
T
J
= 25°C
20
0.1
V
GS
= 5 V
1.8
100
4
1
620
0.005
25
4.5 V
3.4 V
3.6 V
3.8 V
40
10
20
140
30
20
140
10
50
I
D
= 30 A
T
J
= 25°C
789
0.007
0.011
0.015
V
GS
= 11.5 V
105
10
T
J
= 25°C
0.008
10
5
60
70
678
10 11
0.017
0.014
25
60
70
80
90
100
110
120
130
80
90
100
110
120
130
0.017
0.012
0.008
0.006
0.010
0.014
0.016
40 5545 5035
1.3
0.9
1.7
1.2
0.8
1.6
1.1
0.7
1.5
1
T
J
= 125°C
145
0.018
4
NTMFS4841N
http://onsemi.com
5
TYPICAL PERFORMANCE CURVES
C
rss
10 0 10 15 30
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
Figure 7. Capacitance Variation
2000
0
V
GS
V
DS
55
T
J
= 25°C
C
iss
C
oss
C
rss
C
iss
Figure 8. GateToSource and DrainToSource
Voltage vs. Total Charge
0
2
0
Q
G
, TOTAL GATE CHARGE (nC)
1
4
8
V
DD
= 15 V
V
GS
= 11.5 V
I
D
= 30 A
T
J
= 25°C
Q
T
10
0
V
SD
, SOURCETODRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
R
G
, GATE RESISTANCE (W)
1 10 100
1000
1
t, TIME (ns)
V
GS
= 0 V
Figure 10. Diode Forward Voltage vs. Current
100
0.6 0.7
5
10
15
t
r
t
d(off)
t
d(on)
t
f
10
V
DD
= 15 V
I
D
= 15 A
V
GS
= 11.5 V
0.8 0.9
20
30
25
T
J
= 25°C
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1 1 100
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
1000
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
1 ms
100 ms
10 ms
dc
10 ms
20
1
100
0
25
T
J
, STARTING JUNCTION TEMPERATURE (°C)
I
D
= 19 A
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
50 75
20
60
80
100 125
100
180
E
AS
, SINGLE PULSE DRAINTOSOURCE
AVALANCHE ENERGY (mJ)
150
1000
40
25
2200
1800
1600
1400
1200
200
800
600
400
0.5 1.0
120
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
3
426
1614 2612
Q
GS
140
160
12
Q
GD
18 20 22
11
10
9
8
7
6
5
24
NTMFS4841N
http://onsemi.com
6
TYPICAL PERFORMANCE CURVES
125°C
100°C
25°C
Figure 13. EAS vs. Pulse Width
10001 100
PULSE WIDTH (ms)
I
D
, DRAIN CURRENT (AMPS)
10
10
1
100
Figure 14. FET Thermal Response
t, time (s)
1E04 1E03 1E02 1E01 1E+00 1E+01 1E+02 1E+03
0.001
0.01
0.1
1.0
R
q
JA
, EFFECTIVE TRANSIENT
THERMAL RESPONSE
0.0086 W
0.00004
Ambient
Normalized to R
q
JA
at Steady State (1 inch)
0.026 W
0.0002
0.078 W
0.0006
0.748 W
0.004
4.92 W
0.033
7.46 W
0.139
15.76 W
1.03
23 W
2.4
51 W
57
Single Pulse

NTMFS4841NHT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET S08FL 30V 57A 7mOhm
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet