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SIP32102DB-T5-GE1

P1-P3P4-P6P7-P9
SiP32101, SiP32102, SiP32103
www.vishay.com
Vishay Siliconix
S15-0598-Rev. G, 30-Mar-15
1
Document Number: 62617
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
6.5 mΩ, Bi-Directional Battery Switch in Compact WCSP
DESCRIPTION
The SiP32101, SiP32102, and SiP32103 bidirectional
switches feature reverse blocking capability to isolate the
battery from the system. The internal switch has an ultra-low
6.5 mΩ (typ at 3.3 V) on-resistance and operates from a
+2.3 V to +5.5 V input voltage range, making the devices
ideal battery-disconnect switches for high-capacity battery
applications.
The SiP32101, SiP32102, and SiP32103 have slew rate
control, making them ideal in large load capacitor as well as
high-current load switching applications. These devices are
also highly efficient, consuming a mere 10 pA (typ.) current
in shutdown and 15 pA while operating.
The SiP32101 and SiP32103 have an active low enable and
the SiP32102 has an active high enable. They can interface
directly with a low voltage control signal.
The SiP32101, SiP32102, and SiP32103 are available in an
ultra compact 12-Bump, 1.3 mm x 1.7 mm, 0.4 mm pitch
WCSP package with top side lamination. The device
operates over the temperature of -40 °C to +85 °C.
FEATURES
• Bi-directional ON and OFF
• 7 A continuous current capability
• Ultra low R
on
, 6.5 mΩ (typ.) at 3.3 V
• Wide input voltage, 2.3 V to 5.5 V
• Slew rate controlled turn on
• Ultra-low quiescent current: 15 pA (SiP32101, SiP32102)
• EN pin with integrated pull up or pull down resistor
• Available in both logic high and logic low enable options
• Compact 12-Bump, 1.3 mm x 1.7 mm x 0.55 mm
WCSP package
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Smartphones and tablets
• Digital still / video cameras
• Portable meters and test instruments
• Communication devices with embedded batteries
• Portable medical and healthcare systems
• Data storage
• Battery bank
TYPICAL APPLICATION CIRCUIT
Fig. 1 - Typical Application Circuit
Note
• GE1 denotes halogen-free and RoHS-compliant
MARKING
ORDERING INFORMATION
PART NUMBER MARKING ENABLE ENABLE PULL RESISTOR PACKAGE TEMPERATURE
SiP32101DB-T1-GE1 32101 Low enable Pull Low
12-Bump, 1.3 mm x 1.7 mm,
0.4 mm pitch
WCSP package
-40 °C to +85 °C
SiP32102DB-T1-GE1 32102 High enable Pull Low
SiP32102DB-T5-GE1 32102 High enable Pull Low
SiP32103DB-T1-GE1 32103 Low enable Pull High
SiP32101EVB - - -
Evaluation Board
-
SiP32102EVB - - - -
SiP32103EVB - - - -
Port A
Port B
To Battery Pack
System Power Input
Charger Output
System Charging Block
Charging
Control
and
Regulator
System Connector
Power Input
Slew Rate Gate
Drive Logic
LevelShift
GND
EN, EN
SiP32101,
SiP32102
1234
A
B
C
FYWL
32101
SiP32101, SiP32102, SiP32103
www.vishay.com
Vishay Siliconix
S15-0598-Rev. G, 30-Mar-15
2
Document Number: 62617
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Negative current injection up to 300 mA.
b. All bumps soldered to 1 inch x 1 inch, 2 oz. copper, 4 layers PC board.
c. Derate 13.7 mW/°C above T
A
= 70 °C.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating/conditions for extended periods may affect device reliability.
Notes
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. For V
IN
outside this range consult typical EN, EN threshold curve.
ABSOLUTE MAXIMUM RATINGS
PARAMETER CONDITIONS LIMIT UNIT
V
PA
, V
PB
Reference to GND -0.3 to +6
VPulse at 1 ms reference to GND
a
-1.6
V
EN
Reference to GND -0.3 to +6
Maximum Continuous Switch Current 7
A
Maximum Pulse Current 100 μs pulse 15
ESD (HBM) 8000 V
Operating Temperature -40 to +85
°COperating Junction Temperature 125
Storage Temperature -65 to +150
Thermal Resistance (θ
JA
)
b
73 °C/W
Power Dissipation (P
D
)
b, c
T
A
= 70 °C 1096 mW
SPECIFICATIONS
PARAMETER SYMBOL
TEST CONDITIONS UNLESS SPECIFIED LIMITS
UNIT
V
IN
= V
PA
/V
PB
= 2.3 V to 5.5 V, T
A
= -40 °C to 85 °C
(Typical values are at V
PA
, V
PB
= 4.2 V,
C
PA
, C
PB
= 0.1 μF, T
A
= 25 °C)
MIN.
a
TYP.
b
MAX.
a
Power Supply
Operating Voltage
c
V
PA/PB
2.3 - 5.5 V
Quiescent Current I
Q
V
EN
= 0 V (for SiP32101),
V
EN
= V
IN
(for SiP32102),
no load
- 0.015 300 nA
V
EN
= 0 V (for SiP32103),
no load
- 8.2 15 μA
Shutdown Current I
SHDN
V
EN
= V
IN
(for SiP32101),
V
EN
= 0 V (for SiP32102),
no load
- 0.010 300 nA
Internal FET
On-Resistance R
DS(on)
V
PA
/V
PB
= 2.3 V, I
L
= 500 mA, T
A
= 25 °C - 8 13
mΩ
V
PA
/V
PB
= 3.3 V, I
L
= 500 mA, T
A
= 25 °C - 6.5 10
Control
EN
/ EN Input Logic-Low Voltage
c
V
IL
--0.4
V
EN
/ EN Input Logic-High Voltage
c
V
IH
1.4 - -
EN
/ EN Pull Resistor R
EN
V
PA
/V
PB
= 5.5 V, V
EN
(or V
EN
) = 2.3 V - 500 700 kΩ
Timing
Output Turn-On Delay Time t
d(on)
V
IN
= 4.2 V, R
L
= 100 Ω, C
L
= 0.1 μF, T
A
= 25 °C
-0.5-
ms
Output Turn-On Rise Time t
r
-1-
Output Turn-Off Delay Time t
d(off)
-2.4-
Output Turn-Off Fall Time t
f
-1-
SiP32101, SiP32102, SiP32103
www.vishay.com
Vishay Siliconix
S15-0598-Rev. G, 30-Mar-15
3
Document Number: 62617
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BUMP CONFIGURATION
Fig. 2 - WCSP12, 1.3 mm x 1.7 mm
FUNCTIONAL BLOCK DIAGRAM
BUMP DESCRIPTION
BUMP NUMBER NAME FUNCTION
A1, B1, A3, B3, C3 PB Power port B
C1 GND Ground
A2, B2, C2, B4, C4 PA Power port A
A4 EN
/ EN
Switch enable input,
active low for SiP32101 and SiP32103, active high for SiP32102
Top view (solder bumps on bottom)
A1
C3
B3
A3
C2
B2
A2
C1
B1
/EN
Port A
1234
A
C
B
C4
B4
A4
GND Port A
Port A
Port A
Port A
Port B
Port B
Port B
Port B
Port B
Internal Bias
Circuit
Slew Rate Gate
Drive
Logic Level Shift
GND
EN, SiP32101
EN, SiP32102
Port B
SiP32101,
SiP32102
Port A
Internal Bias
Circuit
Slew Rate Gate
Drive
Logic Level Shift
GND
EN, SiP32101
Port B
SiP32103
Port A
P1-P3P4-P6P7-P9

SIP32102DB-T5-GE1

Mfr. #:
Buy SIP32102DB-T5-GE1
Manufacturer:
Vishay / Siliconix
Description:
Power Switch ICs - Power Distribution RECOMMENDED ALT 78-SIP32102DB-T1-GE1
Lifecycle:
New from this manufacturer.
Delivery:
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