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PMEG3020EH,115

P1-P3P4-P6P7-P9P10-P10
PMEG3020EH_EJ_4 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 4 February 2010 3 of 9
NXP Semiconductors
PMEG3020EH; PMEG3020EJ
30 V, 2 A ultra low V
F
MEGA Schottky barrier rectifiers
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm
2
.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating will be available on request.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm
2
.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
reverse voltage - 30 V
I
F
forward current T
sp
≤ 55 °C-2A
I
FRM
repetitive peak forward
current
t
p
≤ 1 ms; δ≤0.25 - 4.5 A
I
FSM
non-repetitive peak forward
current
t = 8 ms; square
wave
[1]
-9A
P
tot
total power dissipation T
amb
≤ 25 °C
PMEG3020EH
[1]
- 375 mW
[2]
- 830 mW
PMEG3020EJ
[1]
- 360 mW
[2]
- 830 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
PMEG3020EH
[1][2]
--330K/W
[2][3]
--150K/W
PMEG3020EJ
[1][2]
--350K/W
[2][3]
--150K/W
R
th(j-sp)
thermal resistance from
junction to solder point
PMEG3020EH - - 60 K/W
PMEG3020EJ - - 55 K/W
PMEG3020EH_EJ_4 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 4 February 2010 4 of 9
NXP Semiconductors
PMEG3020EH; PMEG3020EJ
30 V, 2 A ultra low V
F
MEGA Schottky barrier rectifiers
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage
[1]
I
F
= 1 mA - 125 160 mV
I
F
= 10 mA - 185 220 mV
I
F
= 100 mA - 255 290 mV
I
F
= 500 mA - 330 380 mV
I
F
= 1000 mA - 400 480 mV
I
F
= 2000 mA - 510 620 mV
I
R
reverse current V
R
=10V - 60 150 μA
V
R
= 30 V - 400 1000 μA
C
d
diode capacitance V
R
=1V; f=1MHz - 6072pF
(1) T
amb
= 150 °C
(2) T
amb
= 125 °C
(3) T
amb
=85°C
(4) T
amb
=25°C
(5) T
amb
= −40 °C
(1) T
amb
= 150 °C
(2) T
amb
= 125 °C
(3) T
amb
=85°C
(4) T
amb
=25°C
(5) T
amb
= −40 °C
Fig 1. Forward current as a function of forward
voltage; typical values
Fig 2. Reverse current as a function of reverse
voltage; typical values
006aaa293
10
1
10
3
10
2
10
4
I
F
(mA)
10
−1
V
F
(V)
0 0.60.40.1 0.3 0.50.2
(1) (2) (3) (4) (5)
006aaa294
10
6
I
R
(μA)
10
−2
10
−1
1
10
10
2
10
3
10
4
10
5
V
R
(V)
03520515 302510
(1)
(3)
(2)
(4)
(5)
PMEG3020EH_EJ_4 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 4 February 2010 5 of 9
NXP Semiconductors
PMEG3020EH; PMEG3020EJ
30 V, 2 A ultra low V
F
MEGA Schottky barrier rectifiers
8. Package outline
9. Packing information
[1] For further information and the availability of packing methods, see Section 13.
T
amb
=25°C; f = 1 MHz
Fig 3. Diode capacitance as a function of reverse voltage; typical values
006aaa295
V
R
(V)
0301510 20525
140
C
d
(pF)
0
20
40
60
80
100
120
Fig 4. Package outline SOD123F Fig 5. Package outline SOD323F (SC-90)
04-11-29Dimensions in mm
1.2
1.0
0.25
0.10
3.6
3.4
2.7
2.5
0.55
0.35
0.70
0.55
1.7
1.5
1
2
04-09-13Dimensions in mm
0.80
0.65
0.25
0.10
0.5
0.3
2.7
2.3
1.8
1.6
0.40
0.25
1.35
1.15
1
2
Table 9. Packing methods
The -xxx numbers are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 10000
PMEG3020EH SOD123F 4 mm pitch, 8 mm tape and reel -115 -135
PMEG3020EJ SOD323F 4 mm pitch, 8 mm tape and reel -115 -135
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PMEG3020EH,115

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Manufacturer:
Nexperia
Description:
Schottky Diodes & Rectifiers SCHOTTKY 30V 2A
Lifecycle:
New from this manufacturer.
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