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UH10JT-E3/4W

P1-P3P4-P5
New Product
UH10JT & UHF10JT
Vishay General Semiconductor
Document Number: 88998
Revision: 25-Aug-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
High Voltage Ultrafast Rectifier
FEATURES
• Oxide planar chip junction
• Ultrafast recovery time
• Soft recovery characteristics
• Low switching losses, high efficiency
• High forward surge capability
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high voltage continuous mode power factor
correctors (CCM PFC), switching mode power
supplies, freewheeling diodes and secondary dc-to-dc
rectification application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
10 A
V
RRM
600 V
I
FSM
90 A
t
rr
25 ns
V
F
at I
F
= 10 A 1.41 V
T
J
max. 175 °C
TO-220AC
1
2
PIN 1
PIN 2
CASE
UH10JT
ITO-220AC
PIN 1
PIN 2
UHF10JT
1
2
-
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL UH10JT UHF10JT UNIT
Maximum repetitive peak reverse voltage V
RRM
600 V
Maximum average forward rectified current (Fig. 1) I
F(AV)
10 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
90 A
Isolation voltage (ITO-220AC only)
from terminal to heatsink t = 1 min
V
AC
1500 V
Operating junction and storage temperature range T
J
, T
STG
- 55 to + 175 °C
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
(1)
I
F
= 5 A
I
F
= 10 A
T
A
= 25 °C
V
F
1.70
2.5
-
3.0
V
I
F
= 5 A
I
F
= 10 A
T
A
= 125 °C
1.15
1.41
-
1.80
New Product
UH10JT & UHF10JT
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88998
Revision: 25-Aug-08
2
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Reverse current
(2)
V
R
= 600 V
T
A
= 25 °C
T
A
= 125 °C
I
R
-
27
10
150
µA
Maximum reverse recovery time
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
-25
ns
I
F
= 1.0 A, dI/dt = 50 A/µs,
V
R
= 30 V, I
rr
= 0.1 I
RM
-45
Typical softness factor (t
b
/t
a
)
I
F
= 10 A, dI/dt = 200 A/µs,
V
R
= 400 V, T
J
= 125 °C
S0.45 - -
Typical reverse recovery c urrent I
RM
7.5 - A
Typical stored charge Q
rr
200 - nC
Typical forward recovery time
I
F
= 10 A, dI/dt = 80 A/µs,
V
F
= 1.1 x V
F
max.
t
fr
160 - ns
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
THERMAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL UH10JT UHF10JT UNIT
Typical thermal resistance from junction to case R
θJC
2.0 4.0 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AC UH10JT-E3/4W 1.84 4W 50/tube Tube
ITO-220AC UHF10JT-E3/45 1.73 45 50/tube Tube
Figure 1. Maximum Forward Current Derating Curve
0
2
4
6
8
10
12
0 25 50 75 100 125 150 175
Average Forward Rectified Current (A)
Case Temperature (°C)
Resistive or Inductive Load
UH10JT
UHF10JT
Figure 2. Forward Power Loss Characteristics
0
2
4
6
8
10
12
14
16
18
20
02468 10 12
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
Average Forward Current (A)
Average Power Loss (W)
D = t
p
/T t
p
T
New Product
UH10JT & UHF10JT
Vishay General Semiconductor
Document Number: 88998
Revision: 25-Aug-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Leakage Characteristics
Figure 5. Typical Junction Capacitance
0.01
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
T
A
= 175 °C
T
A
= 125 °C
T
A
= 25 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
0.01
0.1
1
10
100
1000
10 20 30 40 50 60 70 80 90 100
T
A
= 175 °C
T
A
= 125 °C
T
A
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
10
100
0.1 1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Figure 6. Typical Transient Thermal Impedance
Figure 7. Typical Transient Thermal Impedance
0.1
1
10
0.001 0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Case
UH10JT
0.1
1
10
0.001 0.01 0.1 1 10 100
J
unction to Case
UHF10JT
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
P1-P3P4-P5

UH10JT-E3/4W

Mfr. #:
Buy UH10JT-E3/4W
Manufacturer:
Vishay
Description:
Rectifiers 600 Volt 10A 25ns
Lifecycle:
New from this manufacturer.
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