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IXTP56N15T

P1-P3P4-P5
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA56N15T
IXTP56N15T
Fig. 7. Input Admittance
0
10
20
30
40
50
60
70
3.43.84.24.6 5 5.45.86.26.6 7
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
40
45
50
55
0 10203040506070
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
150ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
20
40
60
80
100
120
140
160
0.40.50.60.70.80.9 1 1.11.21.3
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 75V
I
D
= 25A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Maximum Transient Thermal
Impedance
0.01
0.10
1.00
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
© 2007 IXYS CORPORATION, All rights reserved
IXYS REF: T_56N15T (4G) 12-07-06.xls
IXTA56N15T
IXTP56N15T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
7
9
11
13
15
17
19
14 17 20 23 26 29 32 35 38 41 44 47 50 53 56
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 5
Ω
V
GS
= 15V
V
DS
= 75V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
8
9
10
11
12
13
14
15
16
17
18
5 6 7 8 9 1011121314151617181920
R
G
- Ohms
t
r
- Nanoseconds
14
15
16
17
18
19
t
d ( o n )
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 15V
V
DS
= 75V
I
D
= 28A, 56A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
12
13
14
15
16
17
18
19
20
21
22
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
34
36
38
40
42
44
46
48
50
52
54
t
d ( o f f )
- Nanosecond
s
t
f
t
d(off)
- - - -
R
G
= 5
Ω
, V
GS
= 15V
V
DS
= 75V
I
D
= 28A
I
D
= 56A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
12
13
14
15
16
17
18
19
20
21
22
14 17 20 23 26 29 32 35 38 41 44 47 50 53 56
I
D
- Amperes
t
f
- Nanoseconds
34
36
38
40
42
44
46
48
50
52
54
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5
Ω
, V
GS
= 15V
V
DS
= 75V
T
J
= 125ºC
T
J
= 125ºC
T
J
= 25ºC
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
5
10
15
20
25
30
35
40
45
5 6 7 8 9 1011121314151617181920
R
G
- Ohms
t
f
- Nanoseconds
30
40
50
60
70
80
90
100
110
t
d ( o f f )
- Nanosecond
s
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 15V
V
DS
= 75V
I
D
= 28A, 56A
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
8
9
10
11
12
13
14
15
16
17
18
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 5
Ω
V
GS
= 15V
V
DS
= 75V
I
D
= 28A
I
D
= 56A
P1-P3P4-P5

IXTP56N15T

Mfr. #:
Buy IXTP56N15T
Manufacturer:
Littelfuse
Description:
MOSFET 56 Amps 150V 36 Rds
Lifecycle:
New from this manufacturer.
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