NE6510179A-A

NE6510179A
TYPICAL APPLICATION CIRCUIT PERFORMANCE at VDS = 3 V and VDS = 5 V
Gain, I
DSQ
= 200 mA
Gain, I
DSQ
= 600 mA
PAE, I
DSQ
= 200 mA
PAE, I
DSQ
= 600 mA
20 22 24 26 28 30 32 34
14
12
10
8
6
4
2
0
F
C
= 1.96 GHz,
V
DS
= 3 V
60
50
40
30
20
10
0
14
12
10
8
6
4
2
0
20 22 2624 28 30 32 34 36
50
45
40
35
30
25
20
15
10
5
0
Gain, IDSQ = 200 mA
Gain, I
DSQ = 600 mA
PAE, I
DSQ = 200 mA
PAE, I
DSQ = 600 mA
FC = 1.96 GHz, VDS = 5 V
Gain, I
DSQ
= 100 mA
Gain, I
DSQ
= 800 mA
P
OUT
, I
DSQ
= 100 mA
P
OUT
, I
DSQ
= 800 mA
P
OUT
= 16 dB for Gain
29 dB for P
SAT
VDS = 3 V
1.90 1.92 1.94 1.96 1.98 2.00 2.02
16
14
12
10
8
33
32
31
30
29
Gain, I
DSQ
= 100 mA
Gain, I
DSQ
= 800 mA
P
OUT
, I
DSQ
= 100 mA
P
OUT
, I
DSQ
= 800 mA
16
14
12
10
8
36
35
34
32
33
1.91 1.92 1.94 1.96 1.98 2.00 2.02
P
OUT
= 16 dB for Gain
29 dB for P
SAT
VDS = 5 V
IDSQ = 100 mA
I
DSQ = 200 mA
I
DSQ = 400 mA
I
DSQ = 600 mA
I
DSQ = 800 mA
15
20
25
30
35
40
45
20 21 22 23 24 25 26 27 28 29 30
F
C
= 1.96 GHz, P
OUT
= Each Tone
VDS = 3 V
I
DSQ
= 100 mA
I
DSQ
= 200 mA
I
DSQ
= 400 mA
I
DSQ
= 600 mA
I
DSQ
= 800 mA
F
C
= 1.96 GHz, P
OUT
= Each Tone
VDS = 5 V
15
20
25
30
35
40
45
20 21 22 23 24 25 26 27 28 29 30
PAE & GAIN
vs. OUTPUT POWER
Gain, G
A
(dB)
Output Power, POUT (dBm)
Output Power, POUT (dBm)
Gain, G
A
(dB)
PAE (%)
PAE (%)
PAE & GAIN
vs. OUTPUT POWER
GAIN & SATURATED POWER
vs. FREQUENCY
Gain, G
A
(dB)
Frequency, f (GHz)
Saturated Power, P
SAT
(dBm)
GAIN & SATURATED POWER
vs. FREQUENCY
Gain, G
A
(dB)
Frequency, f (GHz)
Saturated Power, P
SAT
(dBm)
THIRD ORDER INTERMODULATION
vs. TOTAL OUTPUT POWER
Third Order Intermodulation Distortion, IM
3
(dBc)
Total Output Power, POUT (dBm)
THIRD ORDER INTERMODULATION
vs. TOTAL OUTPUT POWER
Third Order Intermodulation Distortion, IM
3
(dBc)
Total Output Power, POUT (dBm)
NE6510179A
100 mA
200 mA
400 mA
600 mA
800 mA
F
C
= 1.96 GHz,
V
DS
= 3 V
,
64 CH IS95 CDMA
ACPR2
1.25 MHz
ACPR1
885 KHz
35
40
45
50
55
60
65
23 24 25 26 27 28 29 30 31 32 33
I
DSQ
= 100 mA
I
DSQ
= 200 mA
I
DSQ
= 400 mA
I
DSQ
= 600 mA
I
DSQ
= 800 mA
F
C
= 1.96 GHz,
V
DS
= 5 V
64 CH IS95 CDMA
ACPR1
885 KHz
ACPR2
1.25 MHz
35
40
45
50
55
60
65
23 25 27 29 31 33 35
TYPICAL APPLICATION CIRCUIT PERFORMANCE at VDS = 3 V and VDS = 5 V
ACPR
vs. OUTPUT POWER
ACPR
vs. OUTPUT POWER
Third Order Intermodulation Distortion, IM
3
(dBc)
Third Order Intermodulation Distortion, IM
3
(dBc)
Output Power, POUT (dBm)
Output Power, POUT (dBm)
NE6510179A
Parameters Q1 Parameters Q1
VTO -0.756 RG 0.05
VTOSC 0 RD 0.001
ALPHA 2 RS 0.001
BETA 2.245 RGMET 0
GAMMA 0 KF 0
GAMMADC
(2)
0.01 AF 1
Q 1.7 TNOM 27
DELTA 0 XTI 3
VBI 0.6 EG 1.43
IS 1e-16 VTOTC 0
N 1 BETATCE 0
RIS 0 FFE 1
RID 0
TAU 10e-12
CDS 0.5e-12
RDB 0.001
CBS 0
CGSO
(3)
20e-12
CGDO
(4)
4e-12
DELTA1 0.3
DELTA2 0.2
FC 0.5
VBR Infinity
Parameter Units
capacitance picofarads
inductance nanohenries
resistance ohms
SCHEMATIC
FET NONLINEAR MODEL PARAMETERS
(1)
UNITS
MODEL RANGE
Frequency: 0.5 to 4 GHz
Bias: VDS = 2.2 V to 5 V, ID = 150 mA to 300 mA
Date: 3/29/2000
LG
RDX
0.2 ohms
RDBX
400 ohms
CBSX
RSX
100 pF
0.05 ohms
LSX
0.001 nH
SOURCE
0.65 nH 0.01 nH
DRAIN
LD LDX
0.75 nH
LGX
CGS PKG
0.1 pF
CDS PKG
0.1 pF
0.001 nH
GATE
Q1
NONLINEAR MODEL
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
(1) Series IV Libra TOM Model
The parameter in Libra corresponds to the parameter in PSpice:
(2) GAMMADC GAMMA
(3) CGSO CGS
(4) CGDO CGD
A Business Partner of NEC Com
p
ound Semiconductor Devices, Ltd
.
11/04/2002

NE6510179A-A

Mfr. #:
Manufacturer:
CEL
Description:
RF JFET Transistors L&S Band GaAs HJFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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