1999 Apr 12 2
NXP Semiconductors Product data sheet
PNP general purpose transistor 2PB1219A
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 50 V)
• Low collector-emitter saturation voltage (max. 600 mV).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT323; SC70 plastic package.
NPN
complement: 2PD1820A.
MARKING
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
TYPE NUMBER MARKING CODE
(1)
2PB1219AQ D∗Q
2PB1219AR D∗R
2PB1219AS D∗S
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SOT323; SC70)
and symbol.
handbook, halfpage
MAM048
Top view
2
1
3
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Refer to SOT323; SC70 standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − −60 V
V
CEO
collector-emitter voltage open base − −50 V
V
EBO
emitter-base voltage open collector − −5 V
I
C
collector current (DC) − −500 mA
I
CM
peak collector current − −1 A
I
BM
peak base current − −200 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 200 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
