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VN750SM
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P24
P25-P27
VN750SM
Application information
19/27
3.5
Maximu
m demagnetization ener
g
y (V
CC
= 13.5V)
Figure 26.
Maximum t
urn-off current ver
sus inductan
ce
Note:
V
a
lues are generate
d with R
L
=0
Ω.
In case of repetitiv
e pulses, T
jstar
t
(at beginni
ng of each
demagnetizatio
n) of ev
ery pulse must not e
xceed the temper
ature specified abo
v
e fo
r
curves A and B
.
C: T
jstar
t
= 125°C r
epetitiv
e pulse
A: T
jstar
t
= 150°C single p
ulse
B: T
jstar
t
= 100°C repetitive pulse
Demagnetization
Demagnetization
Demagnetization
t
V
IN
, I
L
1
10
100
0,
1
1
10
100
L(
mH)
I
LM
A
X (
A
)
A
B
C
Obsolete Product(s) - Obsolete Product(s)
Package and PCB therma
l data
VN750SM
20/27
4
P
ac
kage and PCB thermal data
4.1
SO-8 thermal data
Figure 27.
PC board
Note:
La
yout condition of R
th
and Z
th
measurements (PCB FR4 area = 58mm
x 58 mm,PCB
thickness = 2 mm, Cu thickness=35
µ
m , Copper areas:
0.14 cm
2
, 2 cm
2
).
Figure 28.
R
thj-amb
Vs. PCB copper area in open bo
x free air cond
ition
70
75
80
85
90
95
100
105
110
00
.
511
.
522
.
5
PC
B C
u
he
at
s
ink
are
a (
c
m
^
2)
RT
H
j_a
m
b
(º
C
/
W)
SO-
8
a
t
2
pins
c
onne
c
t
e
d t
o T
A
B
Obsolete Product(s) - Obsolete Product(s)
VN750SM
Pac
kage and PCB thermal da
ta
21/27
Figure 29.
SO-8 thermal impedanc
e junct
ion ambient single pulse
Equation 1: pulse c
alculation form
ula
where
δ
= t
P
/T
Figure 30.
Thermal fitting model of a single channel
0.
01
0.
1
1
10
100
1000
0.
0001
0.
001
0.
01
0.
1
1
1
0
100
1000
Ti
m
e
(
s
)
ZT
H
(
°C
/
W)
0.5 cm
2
2 cm
2
Z
TH
δ
R
TH
δ
Z
THtp
1
δ
–
()
+
⋅
=
Obsolete Product(s) - Obsolete Product(s)
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P24
P25-P27
VN750SM
Mfr. #:
Buy VN750SM
Manufacturer:
STMicroelectronics
Description:
IC DRIVER HIGHSIDE 6A 8-SOIC
Lifecycle:
New from this manufacturer.
Delivery:
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VN750SM