HMC-ALH435

LOW NOISE AMPLIFIERS - CHIP
1
1 - 180
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 5 - 20 GHz
v03.1009
General Description
Features
Functional Diagram
Noise Figure: 2.2 dB @ 12 GHz
Gain: 13 dB @ 14 GHz
P1dB Output Power: +16 dBm @ 12 GHz
Supply Voltage: +5V @ 30 mA
Die Size: 1.48 x 0.9 x 0.1 mm
Electrical Speci cations, T
A
= +25° C, Vdd= +5V
Typical Applications
This HMC-ALH435 is ideal for:
• Wideband Communication Systems
• Surveillance Systems
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
• VSAT
The HMC-ALH435 is a GaAs MMIC HEMT Low Noise
Wideband Ampli er die which operates between 5
and 20 GHz. The ampli er provides 13 dB of gain,
2.2 dB noise  gure at 12 GHz and +16 dBm of output
power at 1 dB gain compression while requiring only
30 mA from a +5V supply voltage. The HMC-ALH435
ampli er is ideal for integration into Multi-Chip-
Modules (MCMs) due to its small size.
HMC-ALH435
Parameter Min. Typ. Max. Units
Frequency Range 5 - 20 GHz
Gain 10 13 dB
Gain Variation over Temperature 0.02 dB / °C
Noise Figure 2.2 2.6 dB
Input Return Loss 5dB
Output Return Loss 10 dB
Output IP3 25 dBm
Output Power for 1 dB Compression 16 dBm
Supply Current (Idd)
(Vdd = 5V, Vgg1 = -0.5V Typ., Vgg2 = 1.5V Typ)
30 mA
*Unless otherwise indicated, all measurements are from probed die
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
1
1 - 181
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ALH435
v03.1009
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 5 - 20 GHz
Noise Figure vs. Frequency
Output Return Loss vs. Frequency
Linear Gain vs. Frequency
Input Return Loss vs. Frequency
P1dB vs. Frequency
-10
-8
-6
-4
-2
0
2 6 10 14 18 22 26 30
RETURN LOSS (dB)
FREQUENCY (GHz)
0
1
2
3
4
4 6 8 10 12 14 16 18 20
OUTPUT RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-16
-12
-8
-4
0
2 6 10 14 18 22 26 30
RETURN LOSS (dB)
FREQUENCY (GHz)
0
4
8
12
16
2 6 10 14 18 22 26 30
GAIN (dB)
FREQUENCY (GHz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
1
1 - 182
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ALH435
v03.1009
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 5 - 20 GHz
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage +5.5 Vdc
RF Input Power 15 dBm
Channel Temperature 180 °C
Continuous Power Pdiss (T = 85 °C)
derate 4.7 mW/ °C above 85 °C
0.45 W
Thermal Resistance
(channel to die bottom)
213.3 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE
±
.002”
Die Packaging Information
[1]
Standard Alternate
GP-2 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D

HMC-ALH435

Mfr. #:
Manufacturer:
Analog Devices / Hittite
Description:
RF Amplifier GaAs HEMT WBand lo Noise amp, 5 - 20 GHz
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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