FDS4895C Datasheet FDS4895C | P4-P6

FDS4895C Rev C(W)

Typical Characteristics: Q1 (N-Channel)

0

4

8

12

16

20

0 0.5 1 1.5 2 2.5

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

V

GS

= 10V

6.5V

7.0V

5.5V

6.0V

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

0 4 8 12 16 20

I

D

, DRAIN CURRENT (A)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

V

GS

= 6.0V

8.0V

6.5V

10V

7.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.6

0.8

1

1.2

1.4

1.6

1.8

-50 -25 0 25 50 75 100 125 150

T

J

, JUNCTION TEMPERATURE (

o

C)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

I

D

= 5.5A

V

GS

= 10V

0.025

0.035

0.045

0.055

0.065

0.075

0.085

0.095

0.105

5 6 7 8 9 10

V

GS

, GATE TO SOURCE VOLTAGE (V)

R

DS(ON)

, ON-RESISTANCE (OHM)

I

D

= 2.8A

T

A

= 125

o

C

T

A

= 25

o

C

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

0

5

10

15

20

25

30

3 4 5 6 7 8

V

GS

, GATE TO SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

T

A

= -55

o

C

25

o

C

125

o

C

V

DS

= 10V

0.0001

0.001

0.01

0.1

1

10

100

0 0.2 0.4 0.6 0.8 1 1.2

V

SD

,

BODY DIODE FORWARD VOLTAGE (V)

I

S

, REVERSE DRAIN CURRENT (A)

V

GS

= 0V

T

A

= 125

o

C

25

o

C

-55

o

C

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS4895C

FDS4895C Rev C(W)

Typical Characteristics: Q1 (N-Channel)

0

2

4

6

8

10

12

14

0 2 4 6 8 10 12

Q

g

, GATE CHARGE (nC)

V

GS

, GATE-SOURCE VOLTAGE (V)

I

D

= 5.5A

V

DS

= 10V

30V

20V

0

100

200

300

400

500

600

0 5 10 15 20 25 30 35 40

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

C

iss

C

oss

C

rss

f = 1 MHz

V

GS

= 0 V

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

0.01

0.1

1

10

100

0.1 1 10 100

V

DS

, DRAIN-SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

DC

10s

1s

100ms

100

µ

s

R

DS(ON)

LIMIT

V

GS

= 10.0V

SINGLE PULSE

R

θ

JA

= 135

o

C/W

T

A

= 25

o

C

10ms

1ms

0

10

20

30

40

50

0.001 0.01 0.1 1 10 100 1000

t

1

, TIME (sec)

P(pk), PEAK TRANSIENT POWER (W)

SINGLE PULSE

R

θ

JA

= 135°C/W

T

A

= 25°C

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

FDS4895C

FDS4895C Rev C(W)

Typical Characteristics: Q2 (P-Channel)

0

5

10

15

20

25

30

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5

-V

DS

, DRAIN TO SOURCE VOLTAGE (V)

-I

D

, DRAIN CURRENT (A)

V

GS

= -10V

-6.0V

-4.0V

-4.5V

-3.0V

-3.5V

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

0 5 10 15 20 25 30

-I

D

, DRAIN CURRENT (A)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

V

GS

= - 3.5V

-6.0V

-4.5V

-4.0V

-10V

Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with

Drain Current and Gate Voltage.

0.6

0.7

0.8

0.9

1

1.1

1.2

1.3

1.4

1.5

1.6

-50 -25 0 25 50 75 100 125 150

T

J

, JUNCTION TEMPERATURE (

o

C)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

I

D

= -4.4A

V

GS

= - 10V

0.02

0.04

0.06

0.08

0.1

0.12

0.14

2 4 6 8 10

-V

GS

, GATE TO SOURCE VOLTAGE (V)

R

DS(ON)

, ON-RESISTANCE (OHM)

I

D

= -2.2A

T

A

= 125

o

C

T

A

= 25

o

C

Figure 13. On-Resistance Variation with

Temperature.

Figure 14. On-Resistance Variation with

Gate-to-Source Voltage.

0

5

10

15

20

25

1.5 2 2.5 3 3.5 4 4.5

-V

GS

, GATE TO SOURCE VOLTAGE (V)

-I

D

, DRAIN CURRENT (A)

T

A

= -55

o

C

25

o

C

125

o

C

V

DS

= -10V

0.0001

0.001

0.01

0.1

1

10

100

0 0.2 0.4 0.6 0.8 1 1.2

-V

SD

,

BODY DIODE FORWARD VOLTAGE (V)

-I

S

, REVERSE DRAIN CURRENT (A)

V

GS

= 0V

T

A

= 125

o

C

25

o

C

-55

o

C

Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS4895C

FDS4895C

FDS4895C

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